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GS1GTR

Sangdest Microelectronics (Nanjing)

GS1GTR by Sangdest Microelectronics (Nanjing)

GS1GTR by Sangdest Microelectronics is a single rectifier diode with a max reverse recovery time of 2.5 us and a max output current of 1 A. It has a package style of small outline, making it suitable for surface mount applications in electronic circuits requiring fast switching capabilities at temperatures ranging from -65 to 175 °C.

Median Price

$0.028

Lifecycle Status

Suppliers In-Stock

13

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Future Electronics

Canada . 7,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.028

7,500

-

-

-

$0.028

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Bristol Electronics

USA . 7,366 parts In-Stock

1+ parts

$0.263

100+ parts

$0.131

1k+ parts

$0.052

10k+ parts

$0.039

7,366

$0.263

$0.131

$0.052

$0.039

ComSIT Distribution GmbH

Germany . 13,811 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

13,811

-

-

-

-

Pegasus Components GmbH

Germany . 11,282 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

11,282

-

-

-

-

IBS Electronics

USA . 7,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.022

7,500

-

-

-

$0.022

Dan-Mar Components

USA . 7,366 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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7,366

-

-

-

-

ACDS - Activité Composants Distribution Service

France . 7,200 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,200

-

-

-

-

Legend Electronics Inc.

USA . 4,600 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,600

-

-

-

-

Manoshevitz Elec. Sales

Israel . 1,800 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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1,800

-

-

-

-

Sogenti Electronics

Canada . 1,770 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

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1,770

-

-

-

-

LIBRA Elektronik GmbH

Germany . 1,100 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,100

-

-

-

-

Vyrian

USA . 581 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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581

-

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Nova Conductors

Japan . 10 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 42,892 parts In-Stock

1+ parts

$0.186

100+ parts

-

1k+ parts

-

10k+ parts

-

42,892

$0.186

-

-

-

AZTECH Wire

Italy . 581 parts In-Stock

1+ parts

$7.791

100+ parts

-

1k+ parts

-

10k+ parts

-

581

$7.791

-

-

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Kepictronics

USA . 32,055 parts In-Stock

1+ parts

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32,055

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Perfect Parts

USA . 16,128 parts In-Stock

1+ parts

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16,128

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-

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Cyclops Electronics Ltd (Excess)

UK . 7,200 parts In-Stock

1+ parts

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100+ parts

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7,200

-

-

-

-

Continental Prestige Electronics

USA . 5,904 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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5,904

-

-

-

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Glotronic Ltd.

UK . 5,760 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

-

5,760

-

-

-

-

Argo Parts USA

USA . 4,309 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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4,309

-

-

-

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Authorized Procurement Solutions

USA . 2,700 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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2,700

-

-

-

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Bastille Electronics

Australia . 300 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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300

-

-

-

-

Overview

Discover the GS1GTR diode by Sangdest Microelectronics (Nanjing) - a high-quality product that offers reliable performance and durability. This single-configured rectifier diode, with a maximum reverse test voltage of 400V, is ideal for a wide range of applications. From power supplies to automotive electronics, this diode ensures smooth operation and efficient energy flow. Trust Sangdest Microelectronics' expertise in diodes & rectifiers and experience the value of superior quality and performance with the GS1GTR.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diode, ensuring a long lifespan.

Config: SINGLE

Simplifies circuit design and installation.

Surface Mount: YES

Allows for easy and compact integration onto circuit boards.

Maximum Reverse Recovery Time: 2.5 us

Efficient switching performance for rapid response in circuit operations.

Maximum Reverse Current: 5 uA

Low reverse current minimizes power loss and improves efficiency.

Package Shape: RECTANGULAR

Facilitates easy placement and mounting in circuit applications.

Reverse Test Voltage: 400 V

Suitable for applications requiring high reverse voltage protection.

No. of Terminals: 2

Simplified connection and installation process.

Package Style (Meter): SMALL OUTLINE

Space-saving design for compact electronic devices.

Maximum Operating Temperature: 175 °C

Allows for operation in a wide range of temperature conditions.

Minimum Operating Temperature: -65 °C

Can withstand low-temperature environments for versatile use.

Terminal Position: DUAL

Provides flexibility in circuit connection options.

Diode Type: RECTIFIER DIODE

Well-suited for rectifying AC to DC in various electronic applications.

Maximum Forward Voltage (VF): 1.1 V

Low forward voltage drop for efficient energy conversion.

Maximum Output Current: 1 A

Capable of handling moderate to high current loads.

Terminal Form: C BEND

Facilitates secure and stable connection within circuits.

Maximum Repetitive Peak Reverse Voltage: 400 V

Provides reliable reverse voltage protection.

Maximum Non Repetitive Peak Forward Current: 30 A

Can withstand short-term high current surges.

Diode Element Material: SILICON

Commonly used material known for its reliability and performance in diode applications.

Technical Specifications

Diodes & Rectifiers GS1GTR attributes and parameters. Explore more Diodes & Rectifiers devices from Sangdest Microelectronics (Nanjing)

Specs

Additional Features:

LOW POWER LOSS

Application:

GENERAL PURPOSE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.1 V

JESD-30 Code:

R-PDSO-C2

Maximum Non Repetitive Peak Forward Current:

30 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

1 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Repetitive Peak Reverse Voltage:

400 V

Maximum Reverse Current:

5 uA

Maximum Reverse Recovery Time:

2.5 us

Reverse Test Voltage:

400 V

Surface Mount:

YES

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

GS1GTR Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Sangdest Microelectronics (Nanjing)

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 48,254 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, Analog, MEMS and Sensors Group

Marco Cassis

President, Automotive and Discrete Group

Marco Maria Monti

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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