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STP80L60

Samhop Microelectronics

STP80L60 by Samhop Microelectronics

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 130 W; No. of Terminals: 3; Maximum Drain Current (ID): 80 A;

Median Price

-

Lifecycle Status

Suppliers In-Stock

0

In-Stock Inventory

< 1k

Technical Specifications

Power Field Effect Transistors (FET) STP80L60 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Samhop Microelectronics

Specs

Avalanche Energy Rating (EAS):

420 mJ

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (Abs) (ID):

80 A

Maximum Drain Current (ID):

80 A

Maximum Drain-Source On Resistance:

.012 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

235 pF

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

250 A

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Element Material:

SILICON

Trade Compliance

STP80L60 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

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