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PTZTFTE253.6B

ROHM

PTZTFTE253.6B by ROHM

ROHM's PTZTFTE253.6B Zener Diode has a nominal reference voltage of 3.6V, max power dissipation of 1W, and working test current of 40mA. It is designed for applications requiring precise voltage regulation in automotive electronics, with AEC-Q101 standard compliance.

Median Price

$0.608

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Mouser Electronics

USA . 6,257 parts In-Stock

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$0.620

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$0.317

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$0.238

10k+ parts

$0.183

6,257

$0.620

$0.317

$0.238

$0.183

DigiKey

USA . 83 parts In-Stock

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$0.620

100+ parts

$0.330

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$0.284

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$0.179

83

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$0.330

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$0.179

Newark

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$0.639

100+ parts

$0.325

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$0.281

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5

$0.639

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$0.281

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Verical

USA . 1,500 parts In-Stock

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$0.608

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Farnell

UK . 429 parts In-Stock

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$0.212

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$0.125

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429

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Element14

Singapore . 429 parts In-Stock

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$0.362

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$0.207

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429

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Chip1Stop

Japan . 300 parts In-Stock

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$0.131

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300

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ACDS - Activité Composants Distribution Service

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Nova Conductors

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Ampacity Inc.

Singapore . 2,403 parts In-Stock

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$0.093

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CoreStaff

Japan . 1,500 parts In-Stock

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$0.305

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$0.201

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$0.122

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Continental Prestige Electronics

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$0.332

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$0.214

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$0.119

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$0.110

4,325

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$0.110

Aranea Global

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Overview

Unleash the power of precision with the ROHM PTZTFTE253.6B Zener Diode. Crafted by a reputable manufacturer, this diode offers unmatched quality and reliability for a wide range of applications. Perfect for voltage regulation and protection circuits, this diode ensures stable performance and efficient power management. With its high voltage tolerance and compact package design, the PTZTFTE253.6B provides exceptional value and ease of use for all your electronic projects. Upgrade your devices with the trusted performance of ROHM's Zener Diode today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material is cost-effective and provides good protection for the diode.

Working Test Current: 40 mA

The high working test current of 40 mA ensures the reliability and stability of the diode during operation.

Surface Mount: YES

Being surface mountable makes installation of the diode easy and efficient in various electronic circuits.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150°C allows for reliable performance even in demanding environments.

Maximum Power Dissipation: 1 W

The high maximum power dissipation rating of 1 W ensures that the diode can handle high power loads without overheating.

Nominal Reference Voltage: 3.6 V

The nominal reference voltage of 3.6 V makes this zener diode suitable for applications requiring precise voltage regulation.

Technical Specifications

Zener Diodes PTZTFTE253.6B attributes and parameters. Explore more Zener Diodes devices from ROHM

Specs

Additional Features:

HIGH RELIABILITY

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

JEDEC-95 Code:

DO-214AC

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e1

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

1 W

Reference Standard:

AEC-Q101

Nominal Reference Voltage:

3.6 V

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

10

Maximum Voltage Tolerance:

5.26 %

Working Test Current:

40 mA

Trade Compliance

PTZTFTE253.6B Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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