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DTA113ZUAT106

ROHM

DTA113ZUAT106 by ROHM

ROHM DTA113ZUAT106 is a PNP BJT with VCEsat of 0.3V, hFE of 33, and IC of 0.1A. Ideal for switching applications, it comes in a small outline package with Gull Wing terminals. With a max operating temperature of 150°C, it offers a transition frequency of 250MHz.

Median Price

$0.068

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Chip1Stop

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$0.033

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$0.023

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Verical

USA . 13,150 parts In-Stock

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$0.068

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$0.044

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Arrow

USA . 13,150 parts In-Stock

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$0.068

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$0.044

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Bristol Electronics

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ComSIT Distribution GmbH

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599

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RC Electronics

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Overview

Unlock a world of possibilities with the DTA113ZUAT106 by ROHM. As a leading manufacturer in the industry, ROHM ensures top-notch quality and reliability in their products. This small signal bipolar junction transistor is perfect for switching applications, thanks to its PNP polarity and built-in resistor configuration. With a low VCEsat of 0.3V and maximum power dissipation of 0.2W, this transistor offers superior performance. Its compact size and gull wing terminals make it easy to integrate into various electronic devices. Trust ROHM's DTA113ZUAT106 for efficient and effective solutions in your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: PNP

PNP transistors are commonly used in switching applications, making this transistor suitable for such tasks.

Configuration: SINGLE WITH BUILT-IN RESISTOR

The built-in resistor simplifies circuit design and saves space on the PCB.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance in such circuits.

Surface Mount: YES

Surface mount capability facilitates easy installation on PCBs, ideal for automated manufacturing processes.

Maximum VCEsat: 0.3 V

Low VCEsat value indicates minimal power loss when the transistor is in the on state, increasing efficiency.

Package Shape: RECTANGULAR

Rectangular shape allows for efficient use of space on the PCB, especially in densely populated circuits.

Terminal Form: GULL WING

Gull wing terminals are suitable for surface mounting, providing secure electrical connections.

No. of Terminals: 3

Having 3 terminals allows for the transistor to be easily integrated into various circuit configurations.

Maximum Power Dissipation (Abs): 0.2 W

Low power dissipation enables the transistor to operate efficiently without overheating.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on the PCB, ideal for compact designs.

Minimum DC Current Gain (hFE): 33

Minimum DC current gain indicates a higher amplification capability, enhancing the transistor's performance in signal amplification.

Maximum Operating Temperature: 150 °C

Operational up to 150°C, suitable for applications where high temperatures may be encountered.

Maximum Collector-Emitter Voltage: 50 V

High maximum collector-emitter voltage rating allows for handling higher voltage circuits with safety.

Transistor Element Material: SILICON

Silicon material ensures reliability and stability in transistor operation.

Maximum Collector Current (IC): 0.1 A

With a maximum collector current of 0.1 A, this transistor can handle moderate current loads in various circuits.

Terminal Finish: TIN SILVER COPPER

This terminal finish provides excellent conductivity and corrosion resistance, ensuring reliable connections.

Terminal Position: DUAL

Dual terminal position offers flexibility in circuit design and easy integration into different configurations.

Maximum Time At Peak Reflow Temperature (s): 10

With a short time at peak reflow temperature, the transistor is less susceptible to thermal stress during soldering.

Peak Reflow Temperature °C: 260

High peak reflow temperature ensures proper soldering and secure attachment to the PCB.

Nominal Transition Frequency (fT): 250 MHz

High nominal transition frequency indicates fast switching capabilities, making this transistor suitable for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) DTA113ZUAT106 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from ROHM

Specs

Additional Features:

BUILT-IN BIAS RESISTOR RATIO IS 10

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

33

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e1

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.3 V

Trade Compliance

DTA113ZUAT106 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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