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HAF1002-90L-E

Renesas Technology

HAF1002-90L-E by Renesas Technology

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Package Shape: RECTANGULAR; No. of Elements: 1; Case Connection: DRAIN;

Median Price

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Lifecycle Status

Suppliers In-Stock

0

In-Stock Inventory

< 1k

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 811 parts In-Stock

1+ parts

$65.050

100+ parts

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811

$65.050

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Northwest PG Solutions

USA . 1,438 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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10k+ parts

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1,438

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Native Components

USA . 428 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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10k+ parts

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428

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Technical Specifications

Power Field Effect Transistors (FET) HAF1002-90L-E attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Renesas Technology

Specs

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (ID):

15 A

Maximum Drain-Source On Resistance:

.13 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PSIP-T3

JESD-609 Code:

e6

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Polarity or Channel Type:

Maximum Pulsed Drain Current (IDM):

30 A

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN BISMUTH

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

HAF1002-90L-E Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Renesas Technology

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