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HIP6601BECBZ

Renesas Electronics

HIP6601BECBZ by Renesas Electronics

HALF BRIDGE BASED MOSFET DRIVER; Temperature Grade: OTHER; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: HLSOP; Package Shape: RECTANGULAR;

Median Price

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Lifecycle Status

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In-Stock Inventory

< 1k

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Native Components

USA . 22 parts In-Stock

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$3,402.190

100+ parts

$3,334.146

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$3,300.124

10k+ parts

$3,266.102

22

$3,402.190

$3,334.146

$3,300.124

$3,266.102

Northwest PG Solutions

USA . 736 parts In-Stock

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$3,742.409

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736

$3,742.409

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Supply Digital

USA . 2,597 parts In-Stock

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2,597

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Glotronic Ltd.

UK . 1,920 parts In-Stock

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1,920

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Microchip USA

USA . 494 parts In-Stock

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494

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Assy Fe

Spain . 89 parts In-Stock

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89

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Technical Specifications

MOSFET Gate Drivers HIP6601BECBZ attributes and parameters. Explore more MOSFET Gate Drivers devices from Renesas Electronics

Specs

High Side Driver:

YES

Interface IC Type:

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Length:

4.89 mm

No. of Functions:

1

No. of Terminals:

8

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

0 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, HEAT SINK/SLUG, LOW PROFILE

Maximum Seated Height:

1.68 mm

Maximum Supply Voltage:

13.2 V

Minimum Supply Voltage:

10.8 V

Nominal Supply Voltage:

12 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Width:

3.9 mm

Trade Compliance

HIP6601BECBZ Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Renesas Electronics

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