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ES2CV-W

Rectron

ES2CV-W by Rectron

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Median Price

-

Lifecycle Status

Suppliers In-Stock

0

In-Stock Inventory

< 1k

Technical Specifications

Diodes & Rectifiers ES2CV-W attributes and parameters. Explore more Diodes & Rectifiers devices from Rectron

Specs

Additional Features:

LOW LEAKAGE CURRENT

Application:

SUPER FAST RECOVERY

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.25 V

JEDEC-95 Code:

DO-214AA

JESD-30 Code:

R-PDSO-C2

Maximum Non Repetitive Peak Forward Current:

75 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

2 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

400 V

Maximum Reverse Current:

.5 uA

Maximum Reverse Recovery Time:

.035 us

Reverse Test Voltage:

150 V

Surface Mount:

YES

Terminal Form:

Terminal Position:

Trade Compliance

ES2CV-W Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Rectron

Rectron Limited was established in January 1976 in Tu-Cheng, Taipei by a team of experienced semiconductor engineers. Financed locally, Rectron very quickly emerged as a recognized supplier of quality discrete semi-conductors. In 1981, Rectron increased sales revenues with direct access to the global semiconductor market via a network of exclusive Distributors and Agents. Rectron received approval for initial Public Offering of common stock in January 1985 and has opened wholly owned subsidiaries in Los Angeles, USA; London, England; and Hong Kong. Further expansion came in early 1994 when Rectron commissioned a plant in China to enhance our competitive advantage and increase discrete product manufacturing capacity.

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