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PDTC114EEF

Philips Semiconductors

PDTC114EEF by Philips Semiconductors

NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A; No. of Elements: 1; JESD-609 Code: e3;

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Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) PDTC114EEF attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Philips Semiconductors

Specs

Maximum Collector Current (IC):

Minimum DC Current Gain (hFE):

30

JESD-609 Code:

e3

No. of Elements:

1

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Trade Compliance

PDTC114EEF Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Philips Semiconductors

In September 2006, Philips completed the sale of an 80.1% stake in Philips Semiconductors to a consortium of private equity investors consisting of KKR, Bain Capital, Silver Lake Partners, Apax Partners and AlpInvest Partners. The new company name NXP (from Next eXPerience) was announced on August 31, 2006, and the company was officially launched during the Internationale Funkausstellung (IFA) consumer electronics show in Berlin. The newly independent NXP was ranked as one of the world's top 10 semiconductor companies

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