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PBSS8110AS

Philips Semiconductors

PBSS8110AS by Philips Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .83 W; Maximum Collector Current (IC): 1 A;

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3

In-Stock Inventory

1k+

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Anansix

USA . 2,524 parts In-Stock

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Vyrian

USA . 1,661 parts In-Stock

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Digiode

USA . 1,195 parts In-Stock

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One Stop Electronics

USA . 1,402 parts In-Stock

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$37.050

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Corphita

USA . 3,551 parts In-Stock

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UNI Independent Distributors

Spain . 2,827 parts In-Stock

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Perfect Parts

USA . 141 parts In-Stock

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Technical Specifications

Other Function Transistors PBSS8110AS attributes and parameters. Explore more Other Function Transistors devices from Philips Semiconductors

Specs

Maximum Collector Current (IC):

1 A

Configuration:

Minimum DC Current Gain (hFE):

80

JESD-609 Code:

e3

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Matte Tin (Sn)

Nominal Transition Frequency (fT):

Trade Compliance

PBSS8110AS Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Philips Semiconductors

In September 2006, Philips completed the sale of an 80.1% stake in Philips Semiconductors to a consortium of private equity investors consisting of KKR, Bain Capital, Silver Lake Partners, Apax Partners and AlpInvest Partners. The new company name NXP (from Next eXPerience) was announced on August 31, 2006, and the company was officially launched during the Internationale Funkausstellung (IFA) consumer electronics show in Berlin. The newly independent NXP was ranked as one of the world's top 10 semiconductor companies

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