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BSS89AMO

Philips Semiconductors

BSS89AMO by Philips Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1 W; JESD-609 Code: e0; No. of Elements: 1;

Median Price

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Lifecycle Status

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3

In-Stock Inventory

1k+

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Anansix

USA . 2,481 parts In-Stock

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Digiode

USA . 1,619 parts In-Stock

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Vyrian

USA . 109 parts In-Stock

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One Stop Electronics

USA . 1,493 parts In-Stock

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$52.050

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Corphita

USA . 3,386 parts In-Stock

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UNI Independent Distributors

Spain . 2,130 parts In-Stock

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Northwest PG Solutions

USA . 1,590 parts In-Stock

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Native Components

USA . 378 parts In-Stock

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Technical Specifications

Power Field Effect Transistors (FET) BSS89AMO attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Philips Semiconductors

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

.29 A

Maximum Drain Current (ID):

.29 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code:

e0

No. of Elements:

1

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

1 W

Sub-Category:

FET General Purpose Power

Surface Mount:

NO

Terminal Finish:

Tin/Lead (Sn/Pb)

Trade Compliance

BSS89AMO Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Philips Semiconductors

In September 2006, Philips completed the sale of an 80.1% stake in Philips Semiconductors to a consortium of private equity investors consisting of KKR, Bain Capital, Silver Lake Partners, Apax Partners and AlpInvest Partners. The new company name NXP (from Next eXPerience) was announced on August 31, 2006, and the company was officially launched during the Internationale Funkausstellung (IFA) consumer electronics show in Berlin. The newly independent NXP was ranked as one of the world's top 10 semiconductor companies

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