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BSP60T/R

Philips Semiconductors

BSP60T/R by Philips Semiconductors

PNP; Configuration: DARLINGTON; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): 1.5 W; Maximum Collector Current (IC): 2 A;

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3

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Vyrian

USA . 7,638 parts In-Stock

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Digiode

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Northwest PG Solutions

USA . 2,109 parts In-Stock

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AZTECH Wire

Italy . 11,581 parts In-Stock

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One Stop Electronics

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Native Components

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Corphita

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Technical Specifications

Other Function Transistors BSP60T/R attributes and parameters. Explore more Other Function Transistors devices from Philips Semiconductors

Specs

Maximum Collector Current (IC):

2 A

Configuration:

Maximum Operating Temperature:

150 Cel

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Nominal Transition Frequency (fT):

Trade Compliance

BSP60T/R Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Philips Semiconductors

In September 2006, Philips completed the sale of an 80.1% stake in Philips Semiconductors to a consortium of private equity investors consisting of KKR, Bain Capital, Silver Lake Partners, Apax Partners and AlpInvest Partners. The new company name NXP (from Next eXPerience) was announced on August 31, 2006, and the company was officially launched during the Internationale Funkausstellung (IFA) consumer electronics show in Berlin. The newly independent NXP was ranked as one of the world's top 10 semiconductor companies

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