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BSP51T/R

Philips Semiconductors

BSP51T/R by Philips Semiconductors

NPN; Configuration: DARLINGTON; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.5 W; Maximum Collector Current (IC): .5 A; Minimum DC Current Gain (hFE): 2000;

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3

In-Stock Inventory

1k+

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Vyrian

USA . 7,312 parts In-Stock

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Digiode

USA . 4,987 parts In-Stock

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Anansix

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AZTECH Wire

Italy . 7,312 parts In-Stock

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$5.210

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One Stop Electronics

USA . 253 parts In-Stock

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Corphita

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Northwest PG Solutions

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UNI Independent Distributors

Spain . 2,764 parts In-Stock

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Supply Digital

USA . 1,557 parts In-Stock

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Native Components

USA . 963 parts In-Stock

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Technical Specifications

Other Function Transistors BSP51T/R attributes and parameters. Explore more Other Function Transistors devices from Philips Semiconductors

Specs

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

2000

Maximum Operating Temperature:

150 Cel

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Trade Compliance

BSP51T/R Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Philips Semiconductors

In September 2006, Philips completed the sale of an 80.1% stake in Philips Semiconductors to a consortium of private equity investors consisting of KKR, Bain Capital, Silver Lake Partners, Apax Partners and AlpInvest Partners. The new company name NXP (from Next eXPerience) was announced on August 31, 2006, and the company was officially launched during the Internationale Funkausstellung (IFA) consumer electronics show in Berlin. The newly independent NXP was ranked as one of the world's top 10 semiconductor companies

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