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BS250AMO

Philips Semiconductors

BS250AMO by Philips Semiconductors

P-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .83 W; Terminal Finish: Tin/Lead (Sn/Pb); No. of Elements: 1;

Median Price

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Anansix

USA . 2,011 parts In-Stock

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Digiode

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Vyrian

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One Stop Electronics

USA . 306 parts In-Stock

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UNI Independent Distributors

Spain . 6,520 parts In-Stock

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Corphita

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Glotronic Ltd.

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Northwest PG Solutions

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Native Components

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Technical Specifications

Other Function Transistors BS250AMO attributes and parameters. Explore more Other Function Transistors devices from Philips Semiconductors

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

.25 A

Maximum Drain Current (ID):

.25 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code:

e0

No. of Elements:

1

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Tin/Lead (Sn/Pb)

Trade Compliance

BS250AMO Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Philips Semiconductors

In September 2006, Philips completed the sale of an 80.1% stake in Philips Semiconductors to a consortium of private equity investors consisting of KKR, Bain Capital, Silver Lake Partners, Apax Partners and AlpInvest Partners. The new company name NXP (from Next eXPerience) was announced on August 31, 2006, and the company was officially launched during the Internationale Funkausstellung (IFA) consumer electronics show in Berlin. The newly independent NXP was ranked as one of the world's top 10 semiconductor companies

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