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BLF543

Philips Semiconductors

BLF543 by Philips Semiconductors

N-CHANNEL; Configuration: SINGLE; No. of Elements: 1; Maximum Drain Current (Abs) (ID): 2 A; Maximum Operating Temperature: 200 Cel; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

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One Stop Electronics

USA . 1,527 parts In-Stock

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Technical Specifications

Power Field Effect Transistors (FET) BLF543 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Philips Semiconductors

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

2 A

Maximum Drain Current (ID):

2 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

No. of Elements:

1

Maximum Operating Temperature:

200 Cel

Polarity or Channel Type:

Sub-Category:

FET General Purpose Power

Trade Compliance

BLF543 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-12-347-1269, 5961123471269

NIIN

123471269

Manufacturer Highlights

Philips Semiconductors

In September 2006, Philips completed the sale of an 80.1% stake in Philips Semiconductors to a consortium of private equity investors consisting of KKR, Bain Capital, Silver Lake Partners, Apax Partners and AlpInvest Partners. The new company name NXP (from Next eXPerience) was announced on August 31, 2006, and the company was officially launched during the Internationale Funkausstellung (IFA) consumer electronics show in Berlin. The newly independent NXP was ranked as one of the world's top 10 semiconductor companies

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