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BLF4G10LS-120

Philips Semiconductors

BLF4G10LS-120 by Philips Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Operating Temperature: 150 Cel; Maximum Drain Current (Abs) (ID): 12 A; Operating Mode: ENHANCEMENT MODE;

Median Price

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Lifecycle Status

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6

In-Stock Inventory

1k+

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Digiode

USA . 4,740 parts In-Stock

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Anansix

USA . 2,107 parts In-Stock

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Cyclops Electronics Ltd

UK . 800 parts In-Stock

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Bristol Electronics

USA . 343 parts In-Stock

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Dan-Mar Components

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Vyrian

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One Stop Electronics

USA . 349 parts In-Stock

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A-Z Elektronik GmbH

Germany . 4,512 parts In-Stock

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Alle Elektronik GmbH

Germany . 3,008 parts In-Stock

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UNI Independent Distributors

Spain . 902 parts In-Stock

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Northwest PG Solutions

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Corphita

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Native Components

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Kepictronics

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Technical Specifications

Power Field Effect Transistors (FET) BLF4G10LS-120 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Philips Semiconductors

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

12 A

Maximum Drain Current (ID):

12 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

No. of Elements:

1

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Trade Compliance

BLF4G10LS-120 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Philips Semiconductors

In September 2006, Philips completed the sale of an 80.1% stake in Philips Semiconductors to a consortium of private equity investors consisting of KKR, Bain Capital, Silver Lake Partners, Apax Partners and AlpInvest Partners. The new company name NXP (from Next eXPerience) was announced on August 31, 2006, and the company was officially launched during the Internationale Funkausstellung (IFA) consumer electronics show in Berlin. The newly independent NXP was ranked as one of the world's top 10 semiconductor companies

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