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BFG198T/R

Philips Semiconductors

BFG198T/R by Philips Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): .1 A; No. of Elements: 1;

Median Price

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3

In-Stock Inventory

1k+

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Digiode

USA . 3,220 parts In-Stock

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Anansix

USA . 1,343 parts In-Stock

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Vyrian

USA . 713 parts In-Stock

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Native Components

USA . 980 parts In-Stock

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$0.335

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$0.322

980

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Northwest PG Solutions

USA . 1,677 parts In-Stock

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$0.368

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$0.325

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One Stop Electronics

USA . 367 parts In-Stock

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$27.050

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UNI Independent Distributors

Spain . 6,461 parts In-Stock

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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Corphita

USA . 4,900 parts In-Stock

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Technical Specifications

Other Function Transistors BFG198T/R attributes and parameters. Explore more Other Function Transistors devices from Philips Semiconductors

Specs

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

40

No. of Elements:

1

Maximum Operating Temperature:

175 Cel

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

1 W

Sub-Category:

Other Transistors

Surface Mount:

YES

Trade Compliance

BFG198T/R Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Philips Semiconductors

In September 2006, Philips completed the sale of an 80.1% stake in Philips Semiconductors to a consortium of private equity investors consisting of KKR, Bain Capital, Silver Lake Partners, Apax Partners and AlpInvest Partners. The new company name NXP (from Next eXPerience) was announced on August 31, 2006, and the company was officially launched during the Internationale Funkausstellung (IFA) consumer electronics show in Berlin. The newly independent NXP was ranked as one of the world's top 10 semiconductor companies

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