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BFG17AT/R

Philips Semiconductors

BFG17AT/R by Philips Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .05 A; Terminal Finish: Tin/Lead (Sn/Pb);

Median Price

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3

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1k+

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Vyrian

USA . 4,173 parts In-Stock

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Digiode

USA . 3,285 parts In-Stock

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Anansix

USA . 1,622 parts In-Stock

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One Stop Electronics

USA . 286 parts In-Stock

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$50.050

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Native Components

USA . 582 parts In-Stock

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$68.880

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$66.125

582

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Northwest PG Solutions

USA . 1,632 parts In-Stock

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$75.768

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UNI Independent Distributors

Spain . 3,796 parts In-Stock

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Corphita

USA . 2,050 parts In-Stock

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Technical Specifications

Other Function Transistors BFG17AT/R attributes and parameters. Explore more Other Function Transistors devices from Philips Semiconductors

Specs

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

20

JESD-609 Code:

e0

No. of Elements:

1

Maximum Operating Temperature:

175 Cel

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Tin/Lead (Sn/Pb)

Trade Compliance

BFG17AT/R Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Philips Semiconductors

In September 2006, Philips completed the sale of an 80.1% stake in Philips Semiconductors to a consortium of private equity investors consisting of KKR, Bain Capital, Silver Lake Partners, Apax Partners and AlpInvest Partners. The new company name NXP (from Next eXPerience) was announced on August 31, 2006, and the company was officially launched during the Internationale Funkausstellung (IFA) consumer electronics show in Berlin. The newly independent NXP was ranked as one of the world's top 10 semiconductor companies

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