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BF1107

Philips Semiconductors

BF1107 by Philips Semiconductors

N-CHANNEL; Configuration: SINGLE; Maximum Drain Current (ID): .01 A; Maximum Drain Current (Abs) (ID): .01 A; No. of Elements: 1; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

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Anansix

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Zilex Electronics Inc.

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Digiode

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Lixinc

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Technical Specifications

Power Field Effect Transistors (FET) BF1107 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Philips Semiconductors

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

.01 A

Maximum Drain Current (ID):

.01 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code:

e3

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Sub-Category:

FET General Purpose Power

Terminal Finish:

MATTE TIN

Trade Compliance

BF1107 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Philips Semiconductors

In September 2006, Philips completed the sale of an 80.1% stake in Philips Semiconductors to a consortium of private equity investors consisting of KKR, Bain Capital, Silver Lake Partners, Apax Partners and AlpInvest Partners. The new company name NXP (from Next eXPerience) was announced on August 31, 2006, and the company was officially launched during the Internationale Funkausstellung (IFA) consumer electronics show in Berlin. The newly independent NXP was ranked as one of the world's top 10 semiconductor companies

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