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UD1006LS-SB5

Onsemi

UD1006LS-SB5 by Onsemi

UD1006LS-SB5 by Onsemi is a single rectifier diode with a max forward voltage of 1.3V and output current of 10A. It has a max repetitive peak reverse voltage of 600V, making it suitable for high-power applications requiring fast switching capabilities at temperatures up to 150 °C.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,743 parts In-Stock

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Vyrian

USA . 663 parts In-Stock

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TANS Electronics

Latvia . 6,548 parts In-Stock

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Problanco Electronics

Mexico . 6,254 parts In-Stock

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SupplyDigital Components

Austria . 4,227 parts In-Stock

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Kulean Microsystems

USA . 4,067 parts In-Stock

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Corphita

USA . 1,754 parts In-Stock

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UHIMA Technologies

Türkiye . 543 parts In-Stock

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Corohmni

South Africa . 205 parts In-Stock

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Overview

Experience the next level of efficiency and reliability with the UD1006LS-SB5 by Onsemi. As a leading manufacturer in the industry, Onsemi guarantees top-notch quality and performance in all their products. This rectifier diode is perfect for a wide range of applications, providing fast and precise power conversion. With a maximum output current of 10A and a non-repetitive peak forward current of 120A, this diode offers exceptional value and benefits to customers looking for a durable and efficient solution. Upgrade your electronics with the UD1006LS-SB5 and experience the difference today!

Feature Benefit Bullets

Maximum Reverse Recovery Time: 0.15 us

The low reverse recovery time ensures quick and efficient switching, making this product suitable for applications requiring fast response times.

Maximum Operating Temperature: 150 °C

With a high operating temperature range, this product can withstand challenging environmental conditions and continue to perform reliably.

Terminal Finish: Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)

The use of multiple high-quality metals for terminal finish ensures good conductivity and corrosion resistance, improving the overall durability of the product.

Diode Type: RECTIFIER DIODE

Rectifier diodes are designed for high current and voltage applications, making this product suitable for power supply and rectification circuits.

Maximum Forward Voltage (VF): 1.3 V

The low forward voltage drop of 1.3 V reduces power loss and improves efficiency in the circuit where this diode is used.

Maximum Output Current: 10 A

With a high maximum output current rating of 10 A, this diode can handle significant power loads without getting damaged.

Maximum Repetitive Peak Reverse Voltage: 600 V

The high reverse voltage rating of 600 V makes this diode suitable for applications requiring high voltage rectification and protection.

Maximum Non Repetitive Peak Forward Current: 120 A

The diode's ability to handle a non-repetitive peak forward current of 120 A indicates its robustness and ability to withstand short-term high current surges.

Technical Specifications

Diodes & Rectifiers UD1006LS-SB5 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Config:

SINGLE

Diode Type:

Maximum Forward Voltage (VF):

1.3 V

Maximum Non Repetitive Peak Forward Current:

120 A

No. of Elements:

1

No. of Phases:

1

Maximum Operating Temperature:

150 Cel

Maximum Output Current:

10 A

Maximum Repetitive Peak Reverse Voltage:

600 V

Maximum Reverse Recovery Time:

.15 us

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Terminal Finish:

Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)

Trade Compliance

UD1006LS-SB5 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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