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SZMMSZ5237ET1G

Onsemi

SZMMSZ5237ET1G by Onsemi

SZMMSZ5237ET1G by Onsemi is a Zener diode with 6.5V reverse test voltage, 20mA working test current, and 3uA max reverse current. It is ideal for applications requiring precise voltage regulation in automotive electronics, thanks to its AEC-Q101 reference standard certification.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Chip Stock

USA . 62,000 parts In-Stock

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Vyrian

USA . 6,636 parts In-Stock

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6,636

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Digiode

USA . 2,202 parts In-Stock

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Advanced Electronics

New Zealand . 650 parts In-Stock

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$0.219

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$0.199

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$0.180

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650

$0.219

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AZTECH Wire

Italy . 1,131 parts In-Stock

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$21.350

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QUARKTWIN TECHNOLOGY LTD

USA . 20,573 parts In-Stock

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Kulean Microsystems

USA . 7,370 parts In-Stock

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7,370

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SupplyDigital Components

Austria . 6,367 parts In-Stock

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TANS Electronics

Latvia . 3,357 parts In-Stock

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UHIMA Technologies

Türkiye . 633 parts In-Stock

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633

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Corphita

USA . 625 parts In-Stock

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625

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Corohmni

South Africa . 348 parts In-Stock

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348

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Problanco Electronics

Mexico . 270 parts In-Stock

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Overview

Discover the powerful performance and reliability of the SZMMSZ5237ET1G Zener Diode by Onsemi. With a trusted manufacturer like Onsemi, this diode guarantees top-notch quality and precision in every application. Whether you need voltage regulation, voltage reference, or surge suppression, this diode is your go-to solution. Say goodbye to worries about reverse current with its maximum reverse current of 3 uA and enjoy seamless operation with its maximum dynamic impedance of just 8 ohms. Trust Onsemi for unparalleled value and efficiency in electronic components.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides high durability and reliability, making the Zener diode suitable for various applications.

Working Test Current: 20 mA

The high working test current ensures reliable performance and longevity of the Zener diode under normal operating conditions.

Surface Mount: YES

The surface mount feature allows for easy installation and space-saving design, making it ideal for compact electronic devices.

Maximum Reverse Current: 3 uA

The low maximum reverse current ensures efficient operation and low power consumption of the Zener diode.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature range allows the Zener diode to withstand harsh environmental conditions without performance degradation.

Terminal Finish: MATTE TIN

The matte tin finish provides excellent solderability and corrosion resistance, ensuring a secure electrical connection in a variety of applications.

Maximum Power Dissipation: 0.5 W

With a maximum power dissipation of 0.5 W, this Zener diode can handle high power levels without overheating, ensuring reliable performance.

Technology: ZENER

The Zener technology used in this diode allows for precise voltage regulation and stability, making it ideal for voltage reference and protection circuits.

Technical Specifications

Zener Diodes SZMMSZ5237ET1G attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

8 ohm

Maximum Forward Voltage (VF):

.9 V

JESD-30 Code:

R-PDSO-G2

JESD-609 Code:

e3

Maximum Knee Impedance:

500 ohm

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.5 W

Reference Standard:

AEC-Q101

Nominal Reference Voltage:

8.2 V

Maximum Reverse Current:

3 uA

Reverse Test Voltage:

6.5 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Maximum Voltage Tolerance:

5 %

Working Test Current:

20 mA

Trade Compliance

SZMMSZ5237ET1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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