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SZMMSZ4701ET1G

Onsemi

SZMMSZ4701ET1G by Onsemi

SZMMSZ4701ET1G by Onsemi is a Zener diode with a 14V nominal reference voltage and 5% max voltage tolerance. It operates at up to 150 °C, has a power dissipation of 0.5W, and is surface mountable. Ideal for applications requiring precise voltage regulation in compact electronic devices.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,965 parts In-Stock

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Digiode

USA . 581 parts In-Stock

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AZTECH Wire

Italy . 563 parts In-Stock

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Component Stockers USA

USA . 529 parts In-Stock

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Problanco Electronics

Mexico . 5,964 parts In-Stock

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Kulean Microsystems

USA . 5,961 parts In-Stock

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SupplyDigital Components

Austria . 4,804 parts In-Stock

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Corphita

USA . 1,065 parts In-Stock

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TANS Electronics

Latvia . 481 parts In-Stock

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Microchip USA

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Corohmni

South Africa . 110 parts In-Stock

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UHIMA Technologies

Türkiye . 63 parts In-Stock

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Overview

Unlock a world of precision with the SZMMSZ4701ET1G by Onsemi. As a leading manufacturer in the industry, Onsemi delivers unrivaled quality and reliability in their Zener Diodes. Perfect for a wide range of applications, this product offers customers superior performance, durability, and efficiency. Trust in Onsemi to provide the value, benefits, and advantages you need to take your projects to the next level. Choose the SZMMSZ4701ET1G and experience innovation at its finest.

Feature Benefit Bullets

Config: SINGLE

Single configuration allows for simple installation and use in circuits.

Working Test Current: 0.05 mA

Low working test current ensures minimal power consumption and efficiency in operation.

Surface Mount: YES

Surface mount capability enables easy integration onto circuit boards, saving space and simplifying assembly.

Maximum Voltage Tolerance: 5 %

High voltage tolerance of 5% ensures consistent performance and reliability in varying operating conditions.

Maximum Operating Temperature: 150 °C

High maximum operating temperature of 150 °C allows for reliable performance in a wide range of environments.

Terminal Finish: TIN

Tin terminal finish provides good conductivity and corrosion resistance for long-term reliability.

Maximum Power Dissipation: 0.5 W

High maximum power dissipation of 0.5W allows the diode to handle higher power loads without overheating.

Maximum Time At Peak Reflow Temperature (s): 30

Short maximum time at peak reflow temperature of 30 seconds helps prevent overheating during assembly.

Peak Reflow Temperature °C: 260

High peak reflow temperature of 260 °C ensures reliable soldering and connection to circuit boards.

Diode Type: ZENER DIODE

Zener diode type allows for precise voltage regulation and protection in electronic circuits.

Nominal Reference Voltage: 14 V

Nominal reference voltage of 14V provides stable and accurate voltage regulation in circuits.

Technology: ZENER

Zener technology offers excellent voltage regulation and protection capabilities for electronic devices.

Diode Element Material: SILICON

Silicon diode element material ensures high performance, reliability, and durability in various operating conditions.

Technical Specifications

Zener Diodes SZMMSZ4701ET1G attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

.5 W

Nominal Reference Voltage:

14 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

TIN

Maximum Time At Peak Reflow Temperature (s):

30

Maximum Voltage Tolerance:

5 %

Working Test Current:

.05 mA

Trade Compliance

SZMMSZ4701ET1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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