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SZMM5Z39VT1G

Onsemi

SZMM5Z39VT1G by Onsemi

SZMM5Z39VT1G by Onsemi is a Zener diode with a nominal reference voltage of 39V and max reverse test voltage of 27.3V. It has a working test current of 2mA, making it suitable for applications requiring precise voltage regulation in automotive electronics. With a small outline package style and matte tin terminal finish, it offers reliable performance in temperature ranges from -65 °C to 150°C.

Median Price

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Lifecycle Status

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3

In-Stock Inventory

1k+

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Chip Stock

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Vyrian

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AZTECH Wire

Italy . 1,090 parts In-Stock

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SupplyDigital Components

Austria . 8,228 parts In-Stock

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TANS Electronics

Latvia . 4,764 parts In-Stock

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Kulean Microsystems

USA . 4,419 parts In-Stock

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Corphita

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UHIMA Technologies

Türkiye . 908 parts In-Stock

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Problanco Electronics

Mexico . 280 parts In-Stock

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South Africa . 84 parts In-Stock

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Overview

Discover the superior quality and reliability of the SZMM5Z39VT1G Zener Diode by Onsemi. With a nominal reference voltage of 39V and a maximum power dissipation of 0.5W, this diode is perfect for a wide range of applications. Whether you're looking for precision voltage regulation or overvoltage protection, this diode delivers exceptional performance. Trust in Onsemi's reputation for excellence in semiconductor manufacturing and experience the value and benefits that the SZMM5Z39VT1G brings to your projects. Elevate your designs with this high-quality Zener diode today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and reliability to the product, making it suitable for various applications.

Working Test Current: 2 mA

Ensures consistent and stable performance under normal operating conditions.

Surface Mount: YES

Allows for easy installation on PCBs, saving space and reducing assembly time.

Maximum Reverse Current: 0.05 uA

Ensures minimal leakage current, enhancing efficiency and reliability of the circuit.

Maximum Voltage Tolerance: 5.13 %

Provides accurate voltage regulation, making it suitable for precision applications.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, increasing the versatility of the product.

Maximum Power Dissipation: 0.5 W

Can handle moderate power levels, suitable for a wide range of applications.

Diode Type: ZENER DIODE

Specifically designed for voltage regulation, ensuring stable and reliable output voltage.

Technical Specifications

Zener Diodes SZMM5Z39VT1G attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

130 ohm

Maximum Forward Voltage (VF):

.9 V

JESD-30 Code:

R-PDSO-F2

JESD-609 Code:

e3

Maximum Knee Impedance:

500 ohm

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.5 W

Reference Standard:

AEC-Q101

Nominal Reference Voltage:

39 V

Maximum Reverse Current:

.05 uA

Reverse Test Voltage:

27.3 V

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Voltage Tolerance:

5.13 %

Working Test Current:

2 mA

Trade Compliance

SZMM5Z39VT1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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