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SZBZX84C6V2ET3G

Onsemi

SZBZX84C6V2ET3G by Onsemi

SZBZX84C6V2ET3G by Onsemi is a Zener diode with 6.2V nominal reference voltage, 150 ohm max knee impedance, and 10 ohm max dynamic impedance. It is ideal for applications requiring precise voltage regulation in automotive electronics, consumer electronics, and industrial equipment.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 3,710 parts In-Stock

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Digiode

USA . 2,231 parts In-Stock

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Microchip USA

USA . 2,303 parts In-Stock

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$0.206

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$0.206

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AZTECH Wire

Italy . 952 parts In-Stock

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$11.070

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952

$11.070

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iodParts Technologies Inc.

India . 12,000 parts In-Stock

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12,000

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SupplyDigital Components

Austria . 5,579 parts In-Stock

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Kulean Microsystems

USA . 4,560 parts In-Stock

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4,560

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Problanco Electronics

Mexico . 2,843 parts In-Stock

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TANS Electronics

Latvia . 1,966 parts In-Stock

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Corphita

USA . 1,558 parts In-Stock

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Corohmni

South Africa . 369 parts In-Stock

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UHIMA Technologies

Türkiye . 68 parts In-Stock

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Overview

Discover the high-quality SZBZX84C6V2ET3G Zener Diode by Onsemi, a reliable and trusted manufacturer in the industry. With its durable plastic/epoxy package body material, this single-config diode offers a working test current of 5 mA and maximum reverse current of only 3 uA. Perfect for a wide range of applications, this small outline diode provides customers with exceptional value, benefits, and advantages. From its accurate voltage tolerance to its low dynamic impedance, this Zener diode is the ideal choice for your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy package provides good protection and durability for the diode, making it reliable for long-term use.

Working Test Current: 5 mA

Low working test current ensures efficient operation and less power consumption.

Maximum Reverse Current: 3 uA

Low maximum reverse current indicates better performance and lower leakage current, enhancing the overall efficiency.

Maximum Operating Temperature: 150 °C

High maximum operating temperature allows for use in a wide range of environments without compromising performance.

Reference Standard: AEC-Q101; UL RECOGNIZED

Compliance with industry standards ensures quality and reliability, making it a trusted choice for various applications.

Diode Type: ZENER DIODE

Zener diode type ensures stable and precise voltage regulation, making it ideal for different electrical circuit needs.

Technical Specifications

Zener Diodes SZBZX84C6V2ET3G attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

10 ohm

Maximum Forward Voltage (VF):

.9 V

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Maximum Knee Impedance:

150 ohm

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.25 W

Reference Standard:

AEC-Q101; UL RECOGNIZED

Nominal Reference Voltage:

6.2 V

Maximum Reverse Current:

3 uA

Reverse Test Voltage:

4 V

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Maximum Voltage Tolerance:

6.45 %

Working Test Current:

5 mA

Trade Compliance

SZBZX84C6V2ET3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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