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SS23-TR

Onsemi

SS23-TR by Onsemi

SS23-TR by Onsemi is a Schottky rectifier diode with 30V reverse voltage and 2A output current. It has a max power dissipation of 1.3W and operates b/w -65 °C to 125°C. Ideal for applications requiring high efficiency and fast switching, such as power supplies and voltage clamping circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Digiode

USA . 2,762 parts In-Stock

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Vyrian

USA . 1,774 parts In-Stock

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EMSNET

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SupplyDigital Components

Austria . 8,022 parts In-Stock

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TANS Electronics

Latvia . 5,514 parts In-Stock

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Problanco Electronics

Mexico . 3,916 parts In-Stock

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Corphita

USA . 2,039 parts In-Stock

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UHIMA Technologies

Türkiye . 479 parts In-Stock

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Supply Digital

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Corohmni

South Africa . 303 parts In-Stock

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Kulean Microsystems

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Overview

Discover the SS23-TR by Onsemi, a top-quality Schottky rectifier diode that offers unparalleled performance and reliability. Manufactured by Onsemi, a trusted leader in the industry, this diode is perfect for a wide range of applications. With a maximum operating temperature of 125 °C and a maximum power dissipation of 1.3W, the SS23-TR delivers exceptional value and efficiency. Whether you're looking for a diode for automotive, industrial, or consumer electronics applications, the SS23-TR is the ideal choice. Trust Onsemi for all your diode and rectifier needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material ensures durability and protection for the diode, making it suitable for various operating conditions.

Surface Mount: YES

Allows for easy and convenient installation on circuit boards, saving space and simplifying assembly processes.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, this diode can withstand elevated temperatures without performance degradation.

Maximum Power Dissipation: 1.3 W

The diode can handle high power dissipation levels, ensuring reliable and stable performance under load.

Diode Type: RECTIFIER DIODE

Rectifier diodes are commonly used in power supply circuits, making this diode suitable for various applications requiring efficient rectification.

Technology: SCHOTTKY

Schottky diodes have low forward voltage drop and fast switching characteristics, making this diode ideal for high-frequency applications.

Technical Specifications

Diodes & Rectifiers SS23-TR attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

GENERAL PURPOSE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

JEDEC-95 Code:

DO-214AA

JESD-30 Code:

R-PDSO-C2

Maximum Non Repetitive Peak Forward Current:

50 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

2 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Maximum Power Dissipation:

1.3 W

Maximum Repetitive Peak Reverse Voltage:

30 V

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Form:

Terminal Position:

Trade Compliance

SS23-TR Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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