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SS22T3

Onsemi

SS22T3 by Onsemi

SS22T3 by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.46V and output current of 2A. It operates at a max temperature of 125 °C, making it suitable for power applications. The diode has a peak repetitive reverse voltage of 20V and non-repetitive forward current of 75A, housed in a small outline package for surface mount assembly.

Median Price

$0.089

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 100 parts In-Stock

1+ parts

$0.085

100+ parts

$0.077

1k+ parts

$0.070

10k+ parts

-

100

$0.085

$0.077

$0.070

-

Rochester

USA . 295,750 parts In-Stock

1+ parts

-

100+ parts

$0.092

1k+ parts

$0.077

10k+ parts

$0.068

295,750

-

$0.092

$0.077

$0.068

DigiKey

USA . 295,750 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

$0.120

295,750

-

-

-

$0.120

Verical

USA . 274,750 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

$0.086

274,750

-

-

-

$0.086

Distributors (In-Stock)

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Digiode

USA . 890 parts In-Stock

1+ parts

$0.072

100+ parts

-

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890

$0.072

-

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Vyrian

USA . 1,185 parts In-Stock

1+ parts

$0.076

100+ parts

-

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1,185

$0.076

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-

-

Chip Stock

USA . 29,500 parts In-Stock

1+ parts

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29,500

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Diverse Electronics

Canada . 5,000 parts In-Stock

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5,000

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Semi Source

USA . 3,134 parts In-Stock

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3,134

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Zilex Electronics Inc.

Canada . 2,490 parts In-Stock

1+ parts

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2,490

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Q Components

USA . 550 parts In-Stock

1+ parts

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550

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 2,050 parts In-Stock

1+ parts

$0.068

100+ parts

-

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2,050

$0.068

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-

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Corohmni

South Africa . 111 parts In-Stock

1+ parts

$0.076

100+ parts

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111

$0.076

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Advanced Electronics

New Zealand . 100 parts In-Stock

1+ parts

$0.085

100+ parts

$0.077

1k+ parts

$0.070

10k+ parts

-

100

$0.085

$0.077

$0.070

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Continental Prestige Electronics

USA . 295,750 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

$0.073

10k+ parts

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295,750

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$0.073

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SupplyDigital Components

Austria . 5,014 parts In-Stock

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5,014

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TANS Electronics

Latvia . 4,944 parts In-Stock

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4,944

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Problanco Electronics

Mexico . 4,551 parts In-Stock

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4,551

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Kulean Microsystems

USA . 2,619 parts In-Stock

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2,619

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UHIMA Technologies

Türkiye . 934 parts In-Stock

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934

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Overview

Unleash the power of innovation with the SS22T3 by Onsemi. As a leading manufacturer in the industry, Onsemi guarantees top-notch quality and reliability. This rectifier diode is designed for power applications, offering a maximum output current of 2A and a low forward voltage of only 0.46V. With a small outline package and dual terminals, this Schottky diode is ideal for surface mount applications. Experience the superior performance and efficiency that the SS22T3 brings to your projects. Upgrade to Onsemi today and witness the difference!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package material provides durability and protection for the diode, making it ideal for a variety of applications.

Config: SINGLE

The single configuration simplifies the installation and operation of the diode, making it user-friendly.

Surface Mount: YES

The surface mount capability allows for easy and efficient PCB assembly, saving time and effort during production.

Package Shape: RECTANGULAR

The rectangular shape of the package provides a compact design, saving valuable space in electronic devices.

No. of Terminals: 2

The two terminals make the diode easy to connect and integrate into circuit designs.

Package Style (Meter): SMALL OUTLINE

The small outline of the package style makes it suitable for applications where space is limited.

Application: POWER

Designed for power applications, this diode is capable of handling high output currents and voltages efficiently.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature range ensures reliable performance even in harsh environmental conditions.

Terminal Finish: TIN LEAD

The tin-lead terminal finish provides good solderability and conductivity for reliable connections.

Terminal Position: DUAL

The dual terminal position offers flexibility in circuit design and installation options.

Peak Reflow Temperature °C: 235

The high peak reflow temperature ensures secure solder joints during the assembly process.

Diode Type: RECTIFIER DIODE

As a rectifier diode, this product is efficient in converting AC to DC, making it suitable for power supply applications.

Maximum Forward Voltage (VF): 0.46 V

The low forward voltage drop ensures minimal power loss and efficient operation of the diode.

Maximum Output Current: 2 A

With a high maximum output current, this diode can handle demanding power requirements.

Technology: SCHOTTKY

The Schottky technology provides fast switching speeds and low forward voltage drop, enhancing overall performance.

Terminal Form: C BEND

The C bend terminal form offers ease of installation and secure connections in the circuit.

Maximum Repetitive Peak Reverse Voltage: 20 V

The high maximum repetitive peak reverse voltage ensures reliable operation and protection against voltage spikes.

Maximum Non Repetitive Peak Forward Current: 75 A

The high maximum non-repetitive peak forward current capability makes this diode suitable for applications with transient high currents.

Diode Element Material: SILICON

The silicon diode element material provides high reliability and performance in various operating conditions.

Technical Specifications

Diodes & Rectifiers SS22T3 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

POWER

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.46 V

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

75 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

125 Cel

Maximum Output Current:

2 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

20 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

SS22T3 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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