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SS13FL

Onsemi

SS13FL by Onsemi

SS13FL by Onsemi is a Schottky rectifier diode with a max output current of 1A and a repetitive peak reverse voltage of 30V. It operates b/w -55 °C to 125°C, making it suitable for various applications in automotive electronics. With a fast reverse recovery time of 0.005875us, it is ideal for high-speed switching circuits.

Median Price

$0.110

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 15,000 parts In-Stock

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$0.110

Flip Electronics (Authorized)

USA . 15,000 parts In-Stock

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DigiKey Marketplace

USA . 18,000 parts In-Stock

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Flip Electronics

USA . 15,000 parts In-Stock

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Digiode

USA . 2,016 parts In-Stock

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Vyrian

USA . 1,806 parts In-Stock

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J2 Sourcing AB

Sweden . 226 parts In-Stock

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Component Stockers USA

USA . 618 parts In-Stock

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$99.990

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Metaverse IC Inc.

Canada . 92,000 parts In-Stock

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Kepictronics

USA . 51,300 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 17,743 parts In-Stock

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Formix International (Excess)

India . 12,445 parts In-Stock

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Kulean Microsystems

USA . 6,675 parts In-Stock

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Authorized Procurement Solutions

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TANS Electronics

Latvia . 4,385 parts In-Stock

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Problanco Electronics

Mexico . 3,533 parts In-Stock

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SupplyDigital Components

Austria . 3,140 parts In-Stock

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Corphita

USA . 2,564 parts In-Stock

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Supply Digital

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UHIMA Technologies

Türkiye . 547 parts In-Stock

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Corohmni

South Africa . 449 parts In-Stock

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Overview

Upgrade your electronics with the SS13FL Schottky rectifier diode by Onsemi. This high-quality component offers fast and efficient performance, making it ideal for a wide range of applications. With a maximum output current of 1A and a maximum repetitive peak reverse voltage of 30V, this diode provides reliable protection and improved signal quality. Trust in the expertise of Onsemi, a leading manufacturer in the industry, to deliver cutting-edge technology and superior products. Experience the benefits of the SS13FL today and elevate your projects to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good protection for the diode, ensuring durability and reliability.

Config: SINGLE

Simplifies circuit design and installation.

Surface Mount: YES

Easy to mount on PCBs, saving space and simplifying production.

Maximum Reverse Recovery Time: 0.005875 us

Efficient switching capability, reducing power losses.

Package Shape: RECTANGULAR

Fits well in standard layouts and makes it easy to integrate into designs.

No. of Terminals: 2

Simplifies connection and reduces complexity.

Package Style (Meter): SMALL OUTLINE

Compact design, ideal for applications with space constraints.

Maximum Operating Temperature: 125 °C

Can operate in high-temperature environments.

Minimum Operating Temperature: -55 °C

Can operate in low-temperature environments.

Terminal Finish: MATTE TIN

Provides a reliable connection and corrosion resistance.

Terminal Position: DUAL

Allows for flexibility in circuit layout and connection.

Maximum Time At Peak Reflow Temperature (s): 30

Suitable for reflow soldering processes.

Peak Reflow Temperature °C: 260

Withstands high-temperature soldering processes.

Reference Standard: AEC-Q101

Meets automotive industry quality standards.

Diode Type: RECTIFIER DIODE

Used for converting alternating current to direct current efficiently.

Maximum Output Current: 1 A

Suitable for low to medium power applications.

Technology: SCHOTTKY

Provides fast switching speeds and low forward voltage drop.

Terminal Form: FLAT

Easy to solder and mount on PCBs.

Maximum Repetitive Peak Reverse Voltage: 30 V

Suitable for low to medium voltage applications.

Diode Element Material: SILICON

Reliable and widely used semiconductor material.

Technical Specifications

Diodes & Rectifiers SS13FL attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

JESD-30 Code:

R-PDSO-F2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

1 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

30 V

Maximum Reverse Recovery Time:

.005875 us

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SS13FL Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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