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SS12T3G

Onsemi

SS12T3G by Onsemi

SS12T3G by Onsemi is a Schottky rectifier diode with max forward voltage of 0.47V and max output current of 1A. It operates at up to 150 °C, making it suitable for applications requiring high temperature tolerance in electronics. The diode's small outline package and surface mount capability enhance its versatility in various circuit designs.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Vyrian

USA . 5,439 parts In-Stock

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Digiode

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369

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AZTECH Wire

Italy . 1,198 parts In-Stock

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$11.540

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Component Stockers USA

USA . 436 parts In-Stock

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$99.990

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Metaverse IC Inc.

Canada . 90,000 parts In-Stock

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TANS Electronics

Latvia . 7,040 parts In-Stock

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Kulean Microsystems

USA . 6,385 parts In-Stock

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Lixinc

USA . 6,076 parts In-Stock

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Problanco Electronics

Mexico . 4,264 parts In-Stock

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Authorized Procurement Solutions

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Corphita

USA . 723 parts In-Stock

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SupplyDigital Components

Austria . 307 parts In-Stock

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Corohmni

South Africa . 277 parts In-Stock

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UHIMA Technologies

Türkiye . 258 parts In-Stock

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Overview

Unlock a world of possibilities with the SS12T3G by Onsemi, a top-tier manufacturer known for its high-quality diodes and rectifiers. This small outline rectifier diode offers customers unparalleled value and benefits, such as a maximum forward voltage of 0.47V and a maximum output current of 1A. Ideal for various applications, this Schottky technology diode is designed to withstand temperatures up to 150 °C, making it perfect for use in a wide range of electronic devices. Upgrade your projects with the SS12T3G and experience superior performance like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material for the package body makes the product lightweight and durable, suitable for a variety of applications.

Surface Mount: YES

Being surface mountable, this product can be easily mounted on PCBs, saving space and facilitating automated assembly processes.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature of 150 °C, this product can withstand elevated temperatures, making it reliable in various operating environments.

Diode Type: RECTIFIER DIODE

As a rectifier diode, this product is designed to efficiently convert AC to DC, making it suitable for use in power supply circuits.

Maximum Forward Voltage (VF): 0.47 V

The low maximum forward voltage of 0.47V ensures minimal power loss and efficient operation of the diode.

Maximum Output Current: 1 A

With a maximum output current of 1A, this diode can handle moderate current loads, making it suitable for various electronic applications.

Technology: SCHOTTKY

The Schottky technology used in this diode allows for fast switching and low forward voltage drop, making it ideal for high-frequency applications.

Maximum Repetitive Peak Reverse Voltage: 20 V

The high repetitive peak reverse voltage of 20V provides reliable reverse voltage protection, ensuring the safety and longevity of the circuit.

Technical Specifications

Diodes & Rectifiers SS12T3G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.47 V

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

60 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Maximum Output Current:

1 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

20 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SS12T3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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