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SRV05-4MR6T1G

Onsemi

SRV05-4MR6T1G by Onsemi

SRV05-4MR6T1G by Onsemi is a single avalanche diode with 300W power dissipation and 6V breakdown voltage. Ideal for transient suppression in electronics, it operates b/w -55°C to 125°C. With a unidirectional polarity and max clamping voltage of 17.5V, this device is suitable for surface mount applications.

Median Price

$1.630

Lifecycle Status

Suppliers In-Stock

18

In-Stock Inventory

1k+

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Chip1Stop

Japan . 597 parts In-Stock

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$3.030

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$1.440

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$0.918

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$0.870

597

$3.030

$1.440

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$0.870

Mouser Electronics

USA . 30,366 parts In-Stock

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$3.170

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$1.460

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$1.250

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Element14

Singapore . 7,263 parts In-Stock

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$4.620

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$2.150

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$1.710

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$4.620

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Rochester

USA . 49,913 parts In-Stock

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$1.300

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$1.080

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$0.962

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$1.080

$0.962

DigiKey

USA . 49,913 parts In-Stock

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$1.630

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Verical

USA . 45,624 parts In-Stock

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Avnet

USA . 24,000 parts In-Stock

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$0.956

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Flip Electronics (Authorized)

USA . 2,587 parts In-Stock

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Digiode

USA . 688 parts In-Stock

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$1.007

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$1.007

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Nova Conductors

Japan . 800 parts In-Stock

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$2.334

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Vyrian

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ComSIT Distribution GmbH

Germany . 15,614 parts In-Stock

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ComSIT USA

USA . 15,611 parts In-Stock

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NAC Semi

USA . 3,000 parts In-Stock

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Martec Srl

Italy . 2,687 parts In-Stock

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Flip Electronics

USA . 2,587 parts In-Stock

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Sensible Micro Corp

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Cyclops Electronics Ltd

UK . 531 parts In-Stock

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531

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Distributors (Availability)

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Advanced Electronics

New Zealand . 700 parts In-Stock

1+ parts

$0.054

100+ parts

$0.049

1k+ parts

$0.044

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700

$0.054

$0.049

$0.044

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Aztec Data Supply Inc.

USA . 2,146 parts In-Stock

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$0.070

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$0.070

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Ampacity Inc.

Singapore . 17,019 parts In-Stock

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$0.900

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$0.900

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Semicontronic

India . 15,483 parts In-Stock

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$0.900

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$0.878

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$0.873

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Corphita

USA . 624 parts In-Stock

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$0.954

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Corohmni

South Africa . 249 parts In-Stock

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$1.060

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Argo Parts USA

USA . 84 parts In-Stock

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$1.178

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Aranea Global

USA . 2,000 parts In-Stock

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$2.287

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Continental Prestige Electronics

USA . 52,074 parts In-Stock

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Kepictronics

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Perfect Parts

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iodParts Technologies Inc.

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Lixinc

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SupplyDigital Components

Austria . 8,199 parts In-Stock

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Kulean Microsystems

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TANS Electronics

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Problanco Electronics

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Authorized Procurement Solutions

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GreenTree Electronics

Israel . 562 parts In-Stock

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Brazil . 350 parts In-Stock

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Lucentia Tech

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UHIMA Technologies

Türkiye . 55 parts In-Stock

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Overview

Protect your electronics with the Onsemi SRV05-4MR6T1G Transient Suppression Device. With a maximum non-repetitive peak reverse power dissipation of 300W and a nominal breakdown voltage of 6V, this device offers superior protection against voltage spikes. Manufactured by Onsemi, a trusted name in the industry, this product guarantees quality and reliability. Ideal for applications where protecting sensitive components from voltage transients is crucial, the SRV05-4MR6T1G provides peace of mind and ensures the longevity of your electronic devices. Invest in the best - choose Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material provides durability and protection for the device, making it suitable for a variety of applications.

Maximum Non Repetitive Peak Reverse Power Dissipation: 300 W

With a high maximum power dissipation, this device can handle transient surges effectively without getting damaged.

Nominal Breakdown Voltage: 6 V

The nominal breakdown voltage of 6V indicates the voltage at which the device starts conducting, providing effective suppression of transient voltages.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature allows the device to function effectively even in harsh environmental conditions.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

The use of trans voltage suppressor diode ensures efficient suppression of transient voltage spikes, protecting connected devices.

Maximum Clamping Voltage: 17.5 V

The maximum clamping voltage of 17.5V indicates the maximum voltage that the device will allow to pass through during a transient event, effectively clamping the voltage to a safe level.

Technical Specifications

Transient Suppression Devices SRV05-4MR6T1G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Additional Features:

LOW CAPACITANCE

Minimum Breakdown Voltage:

6 V

Nominal Breakdown Voltage:

6 V

Maximum Clamping Voltage:

17.5 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

300 W

No. of Elements:

1

No. of Terminals:

6

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity:

UNIDIRECTIONAL

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

5 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

SRV05-4MR6T1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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