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SMS24T1

Onsemi

SMS24T1 by Onsemi

SMS24T1 by Onsemi is a Transient Suppression Device with 4 common anode elements. It has a max non-repetitive peak reverse power dissipation of 350W and breakdown voltage of 29.3V. Ideal for protecting electronic circuits from voltage spikes in various applications.

Median Price

$0.119

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 2,950 parts In-Stock

1+ parts

-

100+ parts

$0.119

1k+ parts

$0.099

10k+ parts

$0.088

2,950

-

$0.119

$0.099

$0.088

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 15 parts In-Stock

1+ parts

$0.087

100+ parts

-

1k+ parts

-

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15

$0.087

-

-

-

Digiode

USA . 1,319 parts In-Stock

1+ parts

$0.093

100+ parts

-

1k+ parts

-

10k+ parts

-

1,319

$0.093

-

-

-

Bristol Electronics

USA . 2,810 parts In-Stock

1+ parts

$0.450

100+ parts

$0.225

1k+ parts

$0.090

10k+ parts

-

2,810

$0.450

$0.225

$0.090

-

Chip Stock

USA . 52,000 parts In-Stock

1+ parts

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52,000

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Vyrian

USA . 10,238 parts In-Stock

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10,238

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Microfarads

USA . 43 parts In-Stock

1+ parts

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43

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 2,667 parts In-Stock

1+ parts

$0.083

100+ parts

-

1k+ parts

-

10k+ parts

-

2,667

$0.083

-

-

-

Corohmni

South Africa . 279 parts In-Stock

1+ parts

$0.085

100+ parts

-

1k+ parts

-

10k+ parts

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279

$0.085

-

-

-

Argo Parts USA

USA . 2,683 parts In-Stock

1+ parts

$0.087

100+ parts

-

1k+ parts

-

10k+ parts

$0.084

2,683

$0.087

-

-

$0.084

Continental Prestige Electronics

USA . 2,453 parts In-Stock

1+ parts

$0.087

100+ parts

-

1k+ parts

-

10k+ parts

$0.085

2,453

$0.087

-

-

$0.085

Netroflash

USA . 50 parts In-Stock

1+ parts

$0.087

100+ parts

-

1k+ parts

$0.083

10k+ parts

$0.081

50

$0.087

-

$0.083

$0.081

Corphita

USA . 1,244 parts In-Stock

1+ parts

$0.088

100+ parts

-

1k+ parts

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1,244

$0.088

-

-

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AZTECH Wire

Italy . 820 parts In-Stock

1+ parts

$19.360

100+ parts

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820

$19.360

-

-

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Kulean Microsystems

USA . 6,799 parts In-Stock

1+ parts

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6,799

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TANS Electronics

Latvia . 4,818 parts In-Stock

1+ parts

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100+ parts

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4,818

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SupplyDigital Components

Austria . 4,807 parts In-Stock

1+ parts

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100+ parts

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4,807

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Authorized Procurement Solutions

USA . 1,000 parts In-Stock

1+ parts

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100+ parts

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1,000

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UHIMA Technologies

Türkiye . 608 parts In-Stock

1+ parts

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100+ parts

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608

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Problanco Electronics

Mexico . 557 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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557

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Overview

Discover the powerful protection of Onsemi's SMS24T1 Transient Suppression Device. With its common anode configuration and 4 elements, this device offers reliable safeguarding against voltage spikes. Ideal for a variety of applications, this diode features a small outline package style for easy installation. Trust in Onsemi's quality manufacturing to provide peace of mind knowing your electronics are protected. Upgrade to the SMS24T1 for superior performance and protection.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and reliability for the product, making it suitable for various applications and environments.

Maximum Non Repetitive Peak Reverse Power Dissipation: 350 W

With a high power dissipation capacity, this product can effectively handle power surges and protect connected devices from damage.

Nominal Breakdown Voltage: 29.3 V

The nominal breakdown voltage indicates the voltage at which the device starts conducting, providing reliable voltage protection for connected circuits.

Surface Mount: YES

Being surface mountable allows for easier and more efficient integration into circuit boards, saving space and streamlining assembly processes.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

This type of diode is specifically designed for transient voltage suppression, ensuring effective protection against voltage spikes and surges.

Technical Specifications

Transient Suppression Devices SMS24T1 attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Maximum Breakdown Voltage:

32 V

Minimum Breakdown Voltage:

26.7 V

Nominal Breakdown Voltage:

29.3 V

Maximum Clamping Voltage:

40 V

Config:

COMMON ANODE, 4 ELEMENTS

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

350 W

No. of Elements:

4

No. of Terminals:

6

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.225 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

24 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

SMS24T1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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