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SMO1137V

Onsemi

SMO1137V by Onsemi

SMO1137V by Onsemi is a VCO with modulation sensitivity of 1.7 MHz/V, output power of 10 dBm, and phase noise of -104 dBc/Hz. It operates at a nominal frequency of 11300 MHz and is ideal for applications requiring precise voltage-controlled oscillation in electronic circuits.

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Digiode

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Vyrian

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Problanco Electronics

Mexico . 6,473 parts In-Stock

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TANS Electronics

Latvia . 4,506 parts In-Stock

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Kulean Microsystems

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SupplyDigital Components

Austria . 3,696 parts In-Stock

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Corphita

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UHIMA Technologies

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Corohmni

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Overview

Unlock the potential of your electronic projects with the SMO1137V from Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality VCO Voltage Controlled Oscillators for a wide range of applications. With a modulation sensitivity of 1.7 MHz/V and output power of 10 dBm, this product offers unparalleled performance. Experience crystal-clear signals and precise control with the SMO1137V, designed to meet your needs with its reliable operation and ease of use. Elevate your projects with the value and benefits that only Onsemi can provide.

Feature Benefit Bullets

Modulation Sensitivity: 1.7 MHz/V

Higher modulation sensitivity allows for precise control and tuning of the oscillator frequency, making it versatile for different applications.

Maximum Supply Current: 45 mA

Low maximum supply current enables energy-efficient operation and reduced power consumption, ideal for battery-powered devices.

Output Power: 10 dBm

Decent output power of 10 dBm ensures strong signal strength for reliable communication and transmission.

Nominal Supply Voltage: 5 V

Standard nominal supply voltage of 5 V ensures compatibility with most electronic systems, making it easy to integrate.

Phase Noise: -104 dBc/Hz

Low phase noise of -104 dBc/Hz results in cleaner and more accurate frequency output, essential for high-quality signal processing.

Oscillator Type: VOLTAGE CONTROLLED OSCILLATOR

Voltage controlled oscillator type allows for precise frequency control through varying voltage input, offering flexibility in frequency modulation.

No. of Terminals: 3

Simple design with only 3 terminals simplifies installation and integration, reducing the risk of errors during setup.

Power Variation: 0.37 dB

Low power variation of 0.37 dB ensures stability in output power, maintaining consistent performance over time.

Physical Dimension: 20.22mm x 12.6mm x 7.5mm

Compact size of the oscillator allows for easy placement in a variety of electronic devices, saving space and enabling versatile applications.

Maximum Operating Temperature: 60 °C

High maximum operating temperature of 60 °C ensures reliable performance even in challenging environmental conditions.

Minimum Control Voltage: 3.5 V

Low minimum control voltage of 3.5 V allows for fine-tuning and precise frequency adjustments, catering to specific application requirements.

Minimum Operating Temperature: -30 °C

Low minimum operating temperature of -30 °C ensures functionality even in extreme cold environments, making it suitable for various applications.

Nominal Operating Frequency: 11300 MHz

High nominal operating frequency of 11300 MHz provides the oscillator with the capability to support high-frequency applications such as wireless communication.

Maximum Control Voltage: 4 V

Maximum control voltage of 4 V allows for a wide range of frequency modulation possibilities, offering versatility in signal generation.

Offset Frequency: 100 kHz

Offset frequency of 100 kHz provides options for frequency deviation and modulation, enhancing the oscillator's adaptability for various modulation schemes.

Mounting Feature: THROUGH HOLE MOUNT

Through-hole mounting feature simplifies the installation process and ensures secure placement, making it suitable for both prototyping and production environments.

Technical Specifications

VCO Voltage Controlled Oscillators SMO1137V attributes and parameters. Explore more VCO Voltage Controlled Oscillators devices from Onsemi

Specs

Maximum Control Voltage:

4 V

Minimum Control Voltage:

3.5 V

Modulation Sensitivity:

1.7 MHz/V

Mounting Feature:

No. of Terminals:

3

Offset Frequency:

100 kHz

Nominal Operating Frequency:

11300 MHz

Maximum Operating Temperature:

60 Cel

Minimum Operating Temperature:

-30 Cel

Output Power:

10 dBm

Phase Noise:

-104 dBc/Hz

Physical Dimension:

20.22mm x 12.6mm x 7.5mm

Power Variation:

.37 dB

Maximum Supply Current:

45 mA

Nominal Supply Voltage:

5 V

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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