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SMF15CT1

Onsemi

SMF15CT1 by Onsemi

SMF15CT1 by Onsemi is a transient suppression device with 5 common anode elements. It has a max non-repetitive peak reverse power dissipation of 100W and breakdown voltage of 18V. Ideal for applications requiring protection against voltage transients in compact electronic circuits.

Median Price

$0.826

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip1Stop

Japan . 2,680 parts In-Stock

1+ parts

$0.826

100+ parts

$0.263

1k+ parts

$0.203

10k+ parts

-

2,680

$0.826

$0.263

$0.203

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Distributors (In-Stock)

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Digiode

USA . 258 parts In-Stock

1+ parts

$0.785

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258

$0.785

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Chip Stock

USA . 51,000 parts In-Stock

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51,000

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Vyrian

USA . 9,149 parts In-Stock

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9,149

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Flip Electronics

USA . 2,700 parts In-Stock

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2,700

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Distributors (Availability)

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Corphita

USA . 1,004 parts In-Stock

1+ parts

$0.743

100+ parts

-

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1,004

$0.743

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Corohmni

South Africa . 495 parts In-Stock

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$0.826

100+ parts

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495

$0.826

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AZTECH Wire

Italy . 96 parts In-Stock

1+ parts

$19.290

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96

$19.290

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Perfect Parts

USA . 18,222 parts In-Stock

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18,222

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Problanco Electronics

Mexico . 8,072 parts In-Stock

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8,072

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Kulean Microsystems

USA . 4,999 parts In-Stock

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4,999

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Authorized Procurement Solutions

USA . 2,680 parts In-Stock

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2,680

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GreenTree Electronics

Israel . 2,680 parts In-Stock

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2,680

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Assy Fe

Spain . 2,355 parts In-Stock

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2,355

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SupplyDigital Components

Austria . 1,601 parts In-Stock

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1,601

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TANS Electronics

Latvia . 1,592 parts In-Stock

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1,592

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UHIMA Technologies

Türkiye . 867 parts In-Stock

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867

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Overview

Looking for reliable protection against transient voltage spikes? Look no further than the SMF15CT1 by Onsemi. With a common anode configuration and 5 elements, this small outline package offers 100W of maximum non-repetitive peak reverse power dissipation. Ideal for a variety of applications, this avalanche diode technology provides peace of mind with its 18V nominal breakdown voltage and 29V maximum clamping voltage. Trust in Onsemi's quality and choose the SMF15CT1 for your transient suppression needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material provides durability and protection, making the product suitable for various applications.

Config: COMMON ANODE, 5 ELEMENTS

The common anode configuration with 5 elements allows for efficient transient suppression and protection against voltage spikes.

Surface Mount: YES

Being surface mountable makes the product easy to install and suitable for compact electronic designs.

Maximum Non Repetitive Peak Reverse Power Dissipation: 100 W

With a high power dissipation capability, the product can effectively handle transient events without getting damaged.

Nominal Breakdown Voltage: 18 V

The nominal breakdown voltage of 18V ensures reliable protection against overvoltage conditions.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy integration into electronic circuits and provides a compact footprint.

No. of Terminals: 6

Having 6 terminals provides flexibility in connectivity options and ensures stable connections.

Terminal Finish: TIN LEAD

The tin lead terminal finish offers good solderability and ensures reliable electrical connections.

Minimum Breakdown Voltage: 17 V

The minimum breakdown voltage of 17V ensures protection even at lower voltage levels.

Peak Reflow Temperature °C: 235

With a high peak reflow temperature of 235 °C, the product can withstand soldering processes without damage.

Maximum Breakdown Voltage: 19 V

The maximum breakdown voltage of 19V ensures protection against higher voltage spikes.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

The diode type of trans voltage suppressor diode allows for effective suppression of transient events and ensures reliable performance.

Technology: AVALANCHE

Using avalanche technology ensures rapid response to transient events and provides enhanced protection.

Terminal Form: GULL WING

The gull wing terminal form facilitates easy soldering and ensures robust mechanical connections.

No. of Elements: 5

Having 5 elements provides multiple paths for transient suppression, increasing the overall effectiveness of the device.

Maximum Repetitive Peak Reverse Voltage: 15 V

The maximum repetitive peak reverse voltage of 15V ensures consistent protection against recurring transient events.

Polarity: UNIDIRECTIONAL

The unidirectional polarity ensures that the device only conducts in one direction, providing controlled transient suppression.

Maximum Clamping Voltage: 29 V

With a maximum clamping voltage of 29V, the device limits the voltage spikes to a safe level, protecting downstream components.

Diode Element Material: SILICON

Using silicon diode element material ensures high performance and reliability in suppressing transient events.

Technical Specifications

Transient Suppression Devices SMF15CT1 attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Maximum Breakdown Voltage:

19 V

Minimum Breakdown Voltage:

17 V

Nominal Breakdown Voltage:

18 V

Maximum Clamping Voltage:

29 V

Config:

COMMON ANODE, 5 ELEMENTS

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

100 W

No. of Elements:

5

No. of Terminals:

6

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity:

UNIDIRECTIONAL

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

15 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

SMF15CT1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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