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SMF12AT1G

Onsemi

SMF12AT1G by Onsemi

SMF12AT1G by Onsemi is a Zener diode with 1000W peak power dissipation, 14V breakdown voltage, and 19.9V clamping voltage. It is used in transient suppression applications for protecting circuits from voltage spikes.

Median Price

$0.159

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 152,898 parts In-Stock

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$0.200

152,898

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$0.200

Rochester

USA . 151,698 parts In-Stock

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$0.159

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$0.132

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$0.117

151,698

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$0.159

$0.132

$0.117

Verical

USA . 149,056 parts In-Stock

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$0.147

149,056

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$0.147

Distributors (In-Stock)

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Digiode

USA . 1,646 parts In-Stock

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$0.124

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$0.124

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Nova Conductors

Japan . 750 parts In-Stock

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$0.165

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750

$0.165

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Vyrian

USA . 151,422 parts In-Stock

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Inventory MP

USA . 5,263 parts In-Stock

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5,263

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Bristol Electronics

USA . 5,263 parts In-Stock

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Next Level Components, LLC

USA . 4,590 parts In-Stock

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Ashlea Components Ltd

UK . 150 parts In-Stock

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Martec Srl

Italy . 30 parts In-Stock

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Distributors (Availability)

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Ampacity Inc.

Singapore . 151,171 parts In-Stock

1+ parts

$0.093

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$0.093

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Corohmni

South Africa . 323 parts In-Stock

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$0.109

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323

$0.109

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Corphita

USA . 1,359 parts In-Stock

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$0.117

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1,359

$0.117

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Component Stockers USA

USA . 128,556 parts In-Stock

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$0.130

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$0.120

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$0.110

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$0.110

128,556

$0.130

$0.120

$0.110

$0.110

Argo Parts USA

USA . 3,447 parts In-Stock

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$0.165

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$0.160

3,447

$0.165

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$0.160

Continental Prestige Electronics

USA . 159,256 parts In-Stock

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$0.109

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Kepictronics

USA . 56,000 parts In-Stock

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Authorized Procurement Solutions

USA . 20,000 parts In-Stock

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Perfect Parts

USA . 14,205 parts In-Stock

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Kulean Microsystems

USA . 6,119 parts In-Stock

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SupplyDigital Components

Austria . 3,257 parts In-Stock

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TANS Electronics

Latvia . 2,289 parts In-Stock

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Netroflash

USA . 2,000 parts In-Stock

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$0.162

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$0.157

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$0.153

2,000

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$0.162

$0.157

$0.153

UHIMA Technologies

Türkiye . 903 parts In-Stock

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Problanco Electronics

Mexico . 402 parts In-Stock

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Overview

Enhance your electronic devices with the SMF12AT1G by Onsemi, a high-quality transient suppression device designed to protect against voltage spikes and surges. Manufactured by Onsemi, a trusted name in the industry known for their reliable and durable products, this diode offers unparalleled performance and peace of mind. Ideal for a wide range of applications, from consumer electronics to industrial equipment, this compact and versatile device ensures maximum protection with minimal power dissipation. Get the assurance you need with the SMF12AT1G, where quality and innovation meet to deliver superior results.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This product is a good choice due to its durable and lightweight construction.

Config: SINGLE

Being a single configuration makes this product easy to install and maintain.

Surface Mount: YES

The surface mount option enhances the ease of installation and space-saving benefits.

Max Non Repetitive Peak Reverse Power Dissipation: 1000 W

With a high power dissipation level, this device can handle sudden surge currents effectively.

Nominal Breakdown Voltage: 14 V

The nominal breakdown voltage ensures reliable protection against voltage spikes.

Package Shape: RECTANGULAR

The rectangular shape allows for easy integration into various electronic systems.

Number of Terminals: 2

The two terminals provide a simple and secure connection.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space and allows for compact designs.

Max Operating Temperature: 150 °C

The high operating temperature range ensures optimal performance in various environments.

Min Operating Temperature: -55 °C

The wide operating temperature range allows for use in extreme conditions.

Terminal Finish: TIN

The tin terminal finish provides a reliable and corrosion-resistant connection.

Terminal Position: DUAL

The dual terminal position enhances stability and connectivity.

Max Power Dissipation: 0.385 W

With a low power dissipation requirement, this device is energy-efficient.

Min Breakdown Voltage: 13.3 V

The minimum breakdown voltage offers protection against low-level voltage spikes.

Max Time At Peak Reflow Temperature: 30s

The short reflow time ensures quick and efficient soldering.

Peak Reflow Temperature: 260 C

The high peak reflow temperature allows for reliable soldering connections.

Max Breakdown Voltage: 14.7 V

The maximum breakdown voltage provides additional protection against high voltage levels.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

This diode type effectively suppresses transient voltages for enhanced system protection.

Technology: ZENER

The Zener technology ensures precise voltage regulation and reliable performance.

Terminal Form: FLAT

The flat terminal form facilitates easy soldering and connection.

Max Repetitive Peak Reverse Voltage: 12 V

With a high repetitive peak reverse voltage, this product offers long-term reliability.

Polarity: UNIDIRECTIONAL

The unidirectional polarity ensures consistent and predictable voltage suppression.

Max Clamping Voltage: 19.9 V

The maximum clamping voltage level protects downstream components from voltage spikes.

Diode Element Material: SILICON

The silicon diode element material provides high durability and efficiency.

Technical Specifications

Transient Suppression Devices SMF12AT1G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Additional Features:

EXCELLENT CLAMPING CAPABILITY, LOW ZENER IMPEDANCE

Maximum Breakdown Voltage:

14.7 V

Minimum Breakdown Voltage:

13.3 V

Nominal Breakdown Voltage:

14 V

Maximum Clamping Voltage:

19.9 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-F2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

1000 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.385 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

12 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SMF12AT1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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