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SBT700-06RH-1E

Onsemi

SBT700-06RH-1E by Onsemi

SBT700-06RH-1E by Onsemi is a Schottky rectifier diode with 2 elements, common cathode configuration, and max output current of 35A. It operates at up to 150°C, has a max repetitive peak reverse voltage of 60V, and is ideal for fast soft recovery applications.

Median Price

$1.536

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 21 parts In-Stock

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$0.001

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21

$0.001

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Adafruit Industries

USA . 55 parts In-Stock

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$0.142

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$0.129

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$0.116

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55

$0.142

$0.129

$0.116

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Mouser Electronics

USA . 18 parts In-Stock

1+ parts

$3.880

100+ parts

-

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$2.340

10k+ parts

$1.810

18

$3.880

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$2.340

$1.810

Rochester

USA . 932 parts In-Stock

1+ parts

-

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$1.810

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$1.620

10k+ parts

$1.530

932

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$1.810

$1.620

$1.530

DigiKey

USA . 932 parts In-Stock

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$1.660

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932

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$1.660

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Verical

USA . 932 parts In-Stock

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$1.413

10k+ parts

$1.325

932

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$1.413

$1.325

Flip Electronics (Authorized)

USA . 270 parts In-Stock

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270

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Digiode

USA . 1,451 parts In-Stock

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$0.001

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Vyrian

USA . 13,024 parts In-Stock

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DigiKey Marketplace

USA . 932 parts In-Stock

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Flip Electronics

USA . 270 parts In-Stock

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270

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Distributors (Availability)

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Corphita

USA . 332 parts In-Stock

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$0.001

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Corohmni

South Africa . 468 parts In-Stock

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$0.001

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468

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Advanced Electronics

New Zealand . 55 parts In-Stock

1+ parts

$0.142

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$0.129

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$0.116

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55

$0.142

$0.129

$0.116

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Microchip USA

USA . 3,110 parts In-Stock

1+ parts

$8.710

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$8.710

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SupplyDigital Components

Austria . 8,307 parts In-Stock

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Kulean Microsystems

USA . 6,854 parts In-Stock

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Problanco Electronics

Mexico . 4,619 parts In-Stock

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TANS Electronics

Latvia . 1,907 parts In-Stock

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Continental Prestige Electronics

USA . 932 parts In-Stock

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$1.970

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$1.970

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UHIMA Technologies

Türkiye . 644 parts In-Stock

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644

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Perfect Parts

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GreenTree Electronics

Israel . 50 parts In-Stock

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Overview

Enhance your electronic devices with the SBT700-06RH-1E by Onsemi. With a reputation for superior quality and reliability, Onsemi's diodes & rectifiers guarantee optimal performance in various applications. From fast soft recovery to common cathode configuration, this product offers exceptional value and benefits to customers seeking efficiency and durability. Experience the advantages of a Schottky technology diode that provides a maximum output current of 35A and a maximum forward voltage of 0.66V. Upgrade your electronics today with Onsemi's SBT700-06RH-1E.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diode elements, ensuring a longer lifespan.

Config: COMMON CATHODE, 2 ELEMENTS

Allows for easy configuration in circuits and provides efficient current flow.

Maximum Reverse Current: 1000 uA

Ensures low leakage current when the diode is in the reverse bias condition, leading to better efficiency.

Package Shape: RECTANGULAR

Enables easy integration into circuit boards and compact designs.

Maximum Operating Temperature: 150 °C

Suitable for use in high-temperature environments, increasing the versatility of the diode.

Terminal Finish: TIN

Provides good electrical conductivity and corrosion resistance, ensuring reliable connections.

Diode Type: RECTIFIER DIODE

Specifically designed for rectifying alternating current (AC) to direct current (DC) with high efficiency.

Technology: SCHOTTKY

Offers fast switching speed and low forward voltage drop, ideal for high-frequency applications.

Maximum Output Current: 35 A

Capable of handling high currents, making it suitable for power applications.

Maximum Repetitive Peak Reverse Voltage: 60 V

Can withstand high reverse voltages, ensuring reliable performance in various circuits.

Technical Specifications

Diodes & Rectifiers SBT700-06RH-1E attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

HIGH RELIABILITY

Application:

FAST SOFT RECOVERY

Case Connection:

ISOLATED

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.66 V

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

200 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Maximum Output Current:

35 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Maximum Repetitive Peak Reverse Voltage:

60 V

Maximum Reverse Current:

1000 uA

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Trade Compliance

SBT700-06RH-1E Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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