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SBR835LT4G

Onsemi

SBR835LT4G by Onsemi

SBR835LT4G by Onsemi is a Schottky rectifier diode with a max output current of 8A and max repetitive peak reverse voltage of 35V. It is designed for power applications, operates b/w -65 to 150 °C, and features a small outline package style suitable for surface mount assembly.

Median Price

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Lifecycle Status

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3

In-Stock Inventory

1k+

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Chip Stock

USA . 24,000 parts In-Stock

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Vyrian

USA . 7,824 parts In-Stock

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Ampacity Inc.

Singapore . 262 parts In-Stock

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$2.010

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AZTECH Wire

Italy . 618 parts In-Stock

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$11.480

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TANS Electronics

Latvia . 6,571 parts In-Stock

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SupplyDigital Components

Austria . 5,413 parts In-Stock

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Kepictronics

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Problanco Electronics

Mexico . 4,659 parts In-Stock

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Kulean Microsystems

USA . 3,942 parts In-Stock

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Corphita

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iodParts Technologies Inc.

India . 900 parts In-Stock

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UHIMA Technologies

Türkiye . 492 parts In-Stock

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Corohmni

South Africa . 342 parts In-Stock

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Overview

Experience the superior performance of the SBR835LT4G by Onsemi, a cutting-edge rectifier diode perfect for power applications. Manufactured by Onsemi, a trusted name in the industry, this diode offers unmatched quality and reliability. With its Schottky technology and maximum output current of 8A, this diode provides efficient power delivery and exceptional thermal performance. Whether you're designing automotive electronics or industrial equipment, the SBR835LT4G delivers the value and advantages you need for your project to succeed. Trust Onsemi for top-of-the-line diodes that exceed expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring long-lasting performance.

Maximum Reverse Current: 1400 uA

Offers efficient current flow in the reverse direction, minimizing power loss.

Application: POWER

Designed for power applications, making it suitable for various power-related projects and devices.

Maximum Operating Temperature: 150 °C

Can withstand high operating temperatures, ensuring reliability in demanding environments.

Technology: SCHOTTKY

Utilizes Schottky technology for high efficiency and low voltage drop, ideal for power applications requiring fast switching speeds.

Maximum Repetitive Peak Reverse Voltage: 35 V

Handles high reverse voltages effectively, making it suitable for a wide range of applications.

Technical Specifications

Diodes & Rectifiers SBR835LT4G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

POWER

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.51 V

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

75 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

8 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

35 V

Maximum Reverse Current:

1400 uA

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SBR835LT4G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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