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SA18ARLG

Onsemi

SA18ARLG by Onsemi

SA18ARLG by Onsemi is a ZENER TRANS VOLTAGE SUPPRESSOR DIODE with 500W power dissipation, 21.05V breakdown voltage, and 29.2V clamping voltage. Ideal for transient suppression in electronics, it operates b/w -55 °C to 175°C temperatures with UNIDIRECTIONAL polarity.

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< 1k

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Digiode

USA . 316 parts In-Stock

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Component Stockers USA

USA . 712 parts In-Stock

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Problanco Electronics

Mexico . 7,466 parts In-Stock

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Kulean Microsystems

USA . 7,013 parts In-Stock

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Perfect Parts

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Corphita

USA . 1,892 parts In-Stock

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SupplyDigital Components

Austria . 1,840 parts In-Stock

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UHIMA Technologies

Türkiye . 963 parts In-Stock

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Overview

Elevate your electronic circuits with the SA18ARLG by Onsemi. As a leading manufacturer in transient suppression devices, Onsemi delivers top-quality products that ensure reliable performance and protection for your applications. From safeguarding sensitive electronics to preventing voltage spikes, this Zener diode offers peace of mind with its exceptional voltage clamping capabilities. Trust Onsemi's expertise and choose the SA18ARLG for superior quality and unbeatable value.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material provides durability and protection for the device, making it suitable for a variety of environments.

Maximum Non Repetitive Peak Reverse Power Dissipation: 500 W

With a high peak reverse power dissipation capability of 500W, this device can handle surges and spikes effectively, ensuring reliable protection for connected equipment.

Nominal Breakdown Voltage: 21.05 V

The nominal breakdown voltage of 21.05V indicates the point at which the device starts conducting to suppress voltage spikes and protect downstream components.

Maximum Operating Temperature: 175 °C

The high maximum operating temperature of 175 °C ensures the device can withstand elevated temperatures without compromising its performance.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

The use of a Trans Voltage Suppressor diode ensures efficient and fast response to transient voltage events, providing robust protection for sensitive electronics.

Technical Specifications

Transient Suppression Devices SA18ARLG attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Additional Features:

HIGH RELIABILITY

Maximum Breakdown Voltage:

22.1 V

Minimum Breakdown Voltage:

20 V

Nominal Breakdown Voltage:

21.05 V

Case Connection:

ISOLATED

Maximum Clamping Voltage:

29.2 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

O-PALF-W2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Reverse Power Dissipation:

500 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

LONG FORM

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

3 W

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Maximum Repetitive Peak Reverse Voltage:

18 V

Sub-Category:

Transient Suppressors

Surface Mount:

NO

Technology:

ZENER

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Trade Compliance

SA18ARLG Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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