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RURP3060

Onsemi

RURP3060 by Onsemi

RURP3060 by Onsemi is a single rectifier diode with ultra-fast soft recovery. It has a max reverse recovery time of 0.06 us and can handle up to 30A output current. Ideal for applications requiring high-speed switching and low forward voltage drop, such as power supplies and inverters.

Median Price

$1.130

Lifecycle Status

Suppliers In-Stock

27

In-Stock Inventory

1k+

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EBV Elektronik

Germany . 300 parts In-Stock

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Rochester

USA . 200 parts In-Stock

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$1.130

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$0.938

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$0.836

200

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$1.130

$0.938

$0.836

Distributors (In-Stock)

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Nova Conductors

Japan . 100 parts In-Stock

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$1.110

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DF Sales Co.

USA . 341 parts In-Stock

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DF Sales Co.

USA . 341 parts In-Stock

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TEDSS.com

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Component Electronics Inc.

Canada . 3 parts In-Stock

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$2.310

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Vyrian

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Digiode

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NAC Semi

USA . 650 parts In-Stock

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R&J Components

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ACDS - Activité Composants Distribution Service

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Bristol Electronics

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Dan-Mar Components

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ComSIT Distribution GmbH

Germany . 100 parts In-Stock

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Semtec, LLC

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Resion

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Prism Electronics

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ECAB

Sweden . 20 parts In-Stock

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Electronics Depot

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Semi Source

USA . 6 parts In-Stock

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Halfin

Belgium . 6 parts In-Stock

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Mil-Aero Solutions, Inc.

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Elcom Components

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North Shore Components

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PC Components Company LLC

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Distributors (Availability)

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Corohmni

South Africa . 317 parts In-Stock

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$1.066

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Aranea Global

USA . 50 parts In-Stock

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$1.087

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$1.044

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Microchip USA

USA . 358 parts In-Stock

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$14.885

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AZTECH Wire

Italy . 229 parts In-Stock

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$19.479

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RC Electronics

USA . 39,857 parts In-Stock

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$1.340

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$1.220

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$1.180

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Robosynatics

Brazil . 13,888 parts In-Stock

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$0.133

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Lucentia Tech

USA . 13,888 parts In-Stock

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Perfect Parts

USA . 13,440 parts In-Stock

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TANS Electronics

Latvia . 7,925 parts In-Stock

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SupplyDigital Components

Austria . 6,712 parts In-Stock

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Kulean Microsystems

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Problanco Electronics

Mexico . 5,803 parts In-Stock

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A-Z Elektronik GmbH

Germany . 4,500 parts In-Stock

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Continental Prestige Electronics

USA . 3,617 parts In-Stock

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Corphita

USA . 3,172 parts In-Stock

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Authorized Procurement Solutions

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Assy Fe

Spain . 2,832 parts In-Stock

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Supply Digital

USA . 2,828 parts In-Stock

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Argo Parts USA

USA . 1,421 parts In-Stock

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UHIMA Technologies

Türkiye . 702 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 42 parts In-Stock

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Glotronic Ltd.

UK . 30 parts In-Stock

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Overview

Unlock the power of fast and efficient energy management with the RURP3060 diode by Onsemi. Designed for ultra-fast soft recovery, this rectifier diode offers superior quality and reliability for a wide range of applications. With a maximum output current of 30A and a maximum repetitive peak reverse voltage of 600V, this diode provides unmatched performance in a compact, single-terminal package. Experience the benefits of Onsemi's cutting-edge technology and elevate your energy efficiency to new heights with the RURP3060.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package body makes the diode lightweight and durable, ensuring long-term reliability.

Maximum Reverse Recovery Time: 0.06 us

The ultra-fast reverse recovery time of 0.06 us allows for efficient switching and reduces power loss, making this diode suitable for high-frequency applications.

Application: ULTRA FAST SOFT RECOVERY

The diode is designed for ultra-fast soft recovery, ensuring smooth and efficient operation in high-speed circuits.

Maximum Operating Temperature: 175 °C

With a high maximum operating temperature of 175°C, this diode can withstand high temperatures without compromising performance or reliability.

Maximum Forward Voltage (VF): 1.3 V

The low forward voltage drop of 1.3 V reduces power dissipation and improves efficiency in electronic circuits.

Maximum Output Current: 30 A

The high output current rating of 30 A allows the diode to handle high power loads, making it suitable for demanding applications.

Technical Specifications

Diodes & Rectifiers RURP3060 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Application:

ULTRA FAST SOFT RECOVERY

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.3 V

JEDEC-95 Code:

TO-220AC

JESD-30 Code:

R-PSFM-T2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

325 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

30 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

600 V

Maximum Reverse Recovery Time:

.06 us

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Technology:

AVALANCHE

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

RURP3060 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

NSN

5961-01-573-9776, 5961015739776

NIIN

015739776

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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