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R9097

Onsemi

R9097 by Onsemi

R9097 by Onsemi is an Infrared LED with a peak wavelength of 945nm and max forward current of 0.1A. It operates b/w -25 °C to 80°C, has a viewing angle of 40°, and can withstand a max reverse voltage of 5V. Ideal for applications requiring infrared illumination in various electronic devices.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 1,559 parts In-Stock

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Vyrian

USA . 175 parts In-Stock

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175

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Problanco Electronics

Mexico . 5,930 parts In-Stock

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5,930

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SupplyDigital Components

Austria . 5,681 parts In-Stock

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TANS Electronics

Latvia . 4,462 parts In-Stock

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Kulean Microsystems

USA . 4,054 parts In-Stock

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Corphita

USA . 2,445 parts In-Stock

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Corohmni

South Africa . 206 parts In-Stock

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UHIMA Technologies

Türkiye . 183 parts In-Stock

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Overview

Illuminate your world with the R9097 Infrared LED by Onsemi. Manufactured by a trusted industry leader, this cutting-edge product offers exceptional quality and reliability. Perfect for a wide range of applications, from security systems to night vision cameras, the R9097 provides superior performance and efficiency. Experience the value and benefits of this innovative technology, and see the world in a whole new light with the R9097 by Onsemi.

Feature Benefit Bullets

Maximum Forward Current: 0.1 A

The low forward current requirement ensures efficient energy usage and helps prolong the lifespan of the product.

Peak Wavelength (nm): 945

The peak wavelength of 945 nm makes this product ideal for applications where specific wavelength requirements are necessary, such as in infrared communication systems.

Maximum Operating Temperature: 80 °C

With a maximum operating temperature of 80 °C, this product can withstand high temperatures, making it suitable for use in various industrial and outdoor environments.

Minimum Operating Temperature: -25 °C

The wide operating temperature range of -25 to 80 °C ensures that this product can perform reliably in both cold and hot conditions.

Maximum Reverse Voltage: 5 V

The low maximum reverse voltage requirement of 5 V helps protect the product from voltage spikes and ensures stable operation.

Viewing Angle: 40°

The wide viewing angle of 40° allows for better coverage and visibility in applications where the angle of illumination is crucial.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mounting feature provides a secure and stable mount for the product, making it easy to install in various electronic devices and circuits.

Technical Specifications

Infrared LEDs R9097 attributes and parameters. Explore more Infrared LEDs devices from Onsemi

Specs

Maximum Forward Current:

.1 A

Mounting Feature:

Maximum Operating Temperature:

80 Cel

Minimum Operating Temperature:

-25 Cel

Peak Wavelength (nm):

945

Maximum Reverse Voltage:

5 V

Sub-Category:

Infrared LEDs

Viewing Angle:

40 deg

Trade Compliance

R9097 Optoelectronics trade compliance attributes, and parameters.

HTS

8541.40.20.00

SB

8541.40.20.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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