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QVE11233

Onsemi

QVE11233 by Onsemi

The Onsemi QVE11233 is a SINGLE Transistor Outputs Slotted Switch with 0.05A Max Forward Current, 30V Min Collector-emitter Breakdown Voltage, and 85 °C Max Operating Temp. Ideal for applications requiring precise slot detection in industrial automation systems due to its TRANSISTOR OUTPUT SLOTTED SWITCH optoelectronic type and 3.81mm Nominal Slot Width.

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Lifecycle Status

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4

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1k+

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Chip Stock

USA . 64,000 parts In-Stock

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USA . 1,676 parts In-Stock

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Vyrian

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Bristol Electronics

USA . 715 parts In-Stock

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USA . 20,000 parts In-Stock

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SupplyDigital Components

Austria . 7,200 parts In-Stock

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TANS Electronics

Latvia . 5,543 parts In-Stock

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Problanco Electronics

Mexico . 5,048 parts In-Stock

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Kulean Microsystems

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Authorized Procurement Solutions

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Corphita

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UHIMA Technologies

Türkiye . 406 parts In-Stock

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Benley Electronics

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Overview

Discover the reliable and high-quality QVE11233 by Onsemi, a top-notch manufacturer in the field of optoelectronic components. This transistor outputs slotted switch offers a variety of applications, ensuring its versatility and practicality. Customers can benefit from its efficient performance, durability, and ease of use, making it an ideal choice for various electronic projects. Trust Onsemi to deliver superior quality products that meet your needs and exceed your expectations.

Feature Benefit Bullets

Configuration: SINGLE

Single configuration makes it simple and easy to use for basic applications.

Maximum Forward Current: 0.05 A

The product can handle a maximum forward current of 0.05 A, suitable for low power applications.

Optoelectronic Type: TRANSISTOR OUTPUT SLOTTED SWITCH

This type of optoelectronic component provides accurate switching capabilities.

Output Circuit Type: Transistor

Transistor output provides efficient switching and amplification of signals.

Maximum Operating Temperature: 85 °C

Can operate effectively at high temperatures, making it suitable for a wide range of environments.

Minimum Operating Temperature: -40 °C

Can operate in extremely cold conditions, making it versatile for various applications.

Maximum Dark Current: 100000 nA

Low dark current ensures minimal leakage current when the switch is in the off state.

Nominal Slot Width: 3.81 mm

Standard slot width for compatibility with a wide range of applications.

Minimum Collector-emitter Breakdown Voltage: 30 V

Sufficient breakdown voltage to handle typical voltage transients in the circuit.

Mounting Feature: THROUGH HOLE MOUNT

Through hole mounting offers secure and reliable installation in various electronic systems.

Gap Size: 3.81 mm

The specified gap size ensures proper alignment and operation of the slotted switch.

Maximum On State Current: 0.02 A

Capable of handling a maximum on state current of 0.02 A, suitable for moderate power applications.

Technical Specifications

Transistor Outputs Slotted Switch QVE11233 attributes and parameters. Explore more Transistor Outputs Slotted Switch devices from Onsemi

Specs

Minimum Collector-emitter Breakdown Voltage:

30 V

Configuration:

SINGLE

Maximum Dark Current:

100000 nA

Maximum Forward Current:

.05 A

Gap Size:

3.81 mm

Mounting Feature:

No. of Functions:

1

Maximum On State Current:

.02 A

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Optoelectronic Type:

Output Circuit Type:

Transistor

Nominal Slot Width:

3.81 mm

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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