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QRE1114GR

Onsemi

QRE1114GR by Onsemi

QRE1114GR by Onsemi is a reflective object sensor with a transistor output. It features a max VCEsat of 0.3V, response time of 20us, and operates b/w -40°C to 85°C. Ideal for surface mount applications in various industries requiring precise object detection.

Median Price

$0.980

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

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Mouser Electronics

USA . 989 parts In-Stock

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$0.980

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$0.495

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$0.434

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989

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Flip Electronics (Authorized)

USA . 17,000 parts In-Stock

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Flip Electronics

USA . 91,000 parts In-Stock

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Vyrian

USA . 2,733 parts In-Stock

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Digiode

USA . 1,384 parts In-Stock

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Nova Conductors

Japan . 10 parts In-Stock

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Semicontronic

India . 16,813 parts In-Stock

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$15.750

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$15.356

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$15.278

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Ampacity Inc.

Singapore . 16,797 parts In-Stock

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$20.750

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Continental Prestige Electronics

USA . 5,689 parts In-Stock

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Kulean Microsystems

USA . 5,426 parts In-Stock

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Argo Parts USA

USA . 2,263 parts In-Stock

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Corphita

USA . 2,061 parts In-Stock

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TANS Electronics

Latvia . 2,033 parts In-Stock

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Problanco Electronics

Mexico . 1,986 parts In-Stock

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SupplyDigital Components

Austria . 1,381 parts In-Stock

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UHIMA Technologies

Türkiye . 384 parts In-Stock

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Bastille Electronics

Australia . 200 parts In-Stock

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Corohmni

South Africa . 149 parts In-Stock

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Overview

Enhance your product with the QRE1114GR by Onsemi. Crafted by a reputable manufacturer, this reflective object sensor offers unmatched quality and reliability. Ideal for a wide range of applications, this sensor provides precise detection and quick response times. Unlock new possibilities and streamline your projects with the value and benefits that the QRE1114GR brings to the table. Trust in Onsemi for top-notch solutions that deliver exceptional performance every time.

Feature Benefit Bullets

Maximum VCEsat: 0.3 V

Low VCEsat value allows for efficient signal processing, reducing power consumption and improving overall performance.

Output Circuit Type: Transistor

Transistor output provides a reliable and fast response to detected objects, making the sensor highly accurate.

Sensors or Transducers Type: REFLECTIVE OBJECT SENSOR, TRANSISTOR OUTPUT

Specifically designed for reflective object detection, ensuring precise and consistent performance.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature, this sensor can function effectively in various environments without any risk of overheating.

Response Time: 20 us

A fast response time of 20 microseconds allows for quick detection of objects, enabling rapid decision-making and efficient operations.

Minimum Operating Temperature: -40 °C

Capable of operating in extremely low temperatures, this sensor is suitable for use in a wide range of industrial applications.

Mounting Feature: SURFACE MOUNT

The surface mount design makes installation easy and efficient, saving time and effort during setup.

Technical Specifications

Reflective Object Sensors QRE1114GR attributes and parameters. Explore more Reflective Object Sensors devices from Onsemi

Specs

Mounting Feature:

No. of Channels:

1

No. of Functions:

1

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Output Circuit Type:

Transistor

Response Time:

20 us

Sensors or Transducers Type:

Maximum VCEsat:

.3 V

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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