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QEB421

Onsemi

QEB421 by Onsemi

The Onsemi QEB421 is a single infrared LED with peak wavelength of 880nm, ideal for applications requiring a nominal output power of 10W. Featuring a max forward current of 0.1A and viewing angle of 120°, it operates b/w -55 °C to 100°C. Suitable for surface mount configurations in various optoelectronic projects.

Median Price

$0.277

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

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Rochester

USA . 3,392 parts In-Stock

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-

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$0.277

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$0.230

10k+ parts

$0.205

3,392

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$0.205

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Freelance Electronics

USA . 19 parts In-Stock

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$0.182

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$0.182

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Digiode

USA . 948 parts In-Stock

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$0.217

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Vyrian

USA . 2,276 parts In-Stock

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$0.228

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New Tech Sourcing

USA . 5,467 parts In-Stock

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Bristol Electronics

USA . 4,000 parts In-Stock

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DigiKey Marketplace

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Corohmni

South Africa . 435 parts In-Stock

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$0.182

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Ampacity Inc.

Singapore . 3,171 parts In-Stock

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$0.194

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Corphita

USA . 2,843 parts In-Stock

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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TANS Electronics

Latvia . 5,722 parts In-Stock

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Problanco Electronics

Mexico . 4,732 parts In-Stock

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Supply Digital

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Assy Fe

Spain . 1,994 parts In-Stock

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Kulean Microsystems

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UHIMA Technologies

Türkiye . 756 parts In-Stock

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SupplyDigital Components

Austria . 598 parts In-Stock

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Overview

Illuminate your world with the QEB421 by Onsemi, a high-quality single infrared LED that offers exceptional performance and reliability. Manufactured by Onsemi, a leading name in the industry, this compact 2.4mm round LED is perfect for a wide range of applications. With a peak wavelength of 880nm and a viewing angle of 120°, this product delivers powerful illumination while consuming minimal power. Experience the benefits of quick response times, low operating temperatures, and easy surface mounting with the QEB421. Upgrade your lighting solutions today and see the difference for yourself!

Feature Benefit Bullets

Configuration: SINGLE

Single configuration allows for easier integration into various applications.

Size: 2.4 mm

Compact size enables flexibility in design and placement.

Maximum Forward Current: 0.1 A

Allows for efficient power consumption and operation.

Peak Wavelength (nm): 880

Optimal wavelength for applications requiring infrared light.

Optoelectronic Type: INFRARED LED

Specifically designed for emitting infrared light with high efficiency.

Maximum Operating Temperature: 100 °C

Can withstand high temperatures for extended periods of time.

Shape: ROUND

Uniform shape provides consistent light emission.

Minimum Operating Temperature: -55 °C

Suitable for operation in cold environments.

Nominal Output Power: 10 W

Generates sufficient output power for various applications.

Maximum Response Time: 0.000001 s

Provides quick and accurate response for time-sensitive operations.

Maximum Reverse Voltage: 5 V

Protection against reverse voltage to ensure component longevity.

Semiconductor Material: AlGaAs

High-quality material for reliable and consistent performance.

Viewing Angle: 120°

Wide viewing angle for enhanced coverage and visibility.

Spectral Bandwidth: 80 m

Narrow spectral bandwidth for precise and focused light emission.

Mounting Feature: SURFACE MOUNT

Easy and secure mounting for convenient installation.

Maximum Forward Voltage: 1.8 V

Efficient forward voltage for optimal power usage.

Technical Specifications

Infrared LEDs QEB421 attributes and parameters. Explore more Infrared LEDs devices from Onsemi

Specs

Configuration:

SINGLE

Maximum Forward Current:

.1 A

Maximum Forward Voltage:

1.8 V

Mounting Feature:

No. of Functions:

1

Maximum Operating Temperature:

100 Cel

Minimum Operating Temperature:

-55 Cel

Optoelectronic Type:

Nominal Output Power:

10 W

Peak Wavelength (nm):

880

Maximum Response Time:

.000001 s

Maximum Reverse Voltage:

5 V

Semiconductor Material:

AlGaAs

Shape:

ROUND

Size:

2.4 mm

Spectral Bandwidth:

80 m

Viewing Angle:

120 deg

Trade Compliance

QEB421 Optoelectronics trade compliance attributes, and parameters.

HTS

8541.40.20.00

SB

8541.40.20.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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