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P6KE11ARLG

Onsemi

P6KE11ARLG by Onsemi

P6KE11ARLG by Onsemi is a 600W TRANS VOLTAGE SUPPRESSOR DIODE with 11.05V Breakdown Voltage and 15.6V Max Clamping Voltage. It is used for transient suppression in electronics to protect against voltage spikes, suitable for applications requiring protection from overvoltage events.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Chip Stock

USA . 70,000 parts In-Stock

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Vyrian

USA . 7,581 parts In-Stock

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USA . 955 parts In-Stock

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AZTECH Wire

Italy . 323 parts In-Stock

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$12.640

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Component Stockers USA

USA . 425 parts In-Stock

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$99.990

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TANS Electronics

Latvia . 7,826 parts In-Stock

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Problanco Electronics

Mexico . 7,569 parts In-Stock

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SupplyDigital Components

Austria . 6,913 parts In-Stock

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Kulean Microsystems

USA . 3,110 parts In-Stock

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Corphita

USA . 919 parts In-Stock

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UHIMA Technologies

Türkiye . 787 parts In-Stock

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Corohmni

South Africa . 317 parts In-Stock

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Overview

Enhance your electronic systems with the P6KE11ARLG transient suppression device from Onsemi. Designed with top-quality materials and advanced technology, this diode offers reliable protection against voltage spikes, ensuring the safety and longevity of your devices. Whether you're in the automotive industry, telecommunications sector, or consumer electronics field, this product is a must-have for safeguarding your equipment. Trust Onsemi's expertise and choose the P6KE11ARLG for unmatched performance and peace of mind.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used for the package body provides durability and protection for the internal components of the transient suppression device.

Maximum Non Repetitive Peak Reverse Power Dissipation: 600 W

The high maximum non repetitive peak reverse power dissipation of 600 W ensures that the device can handle sudden spikes in voltage without being damaged, making it reliable for transient suppression.

Nominal Breakdown Voltage: 11.05 V

The nominal breakdown voltage of 11.05 V indicates the voltage at which the device can effectively suppress transient spikes, ensuring protection for connected electronic equipment.

Package Shape: ROUND

The round package shape is compact and space-saving, making it easy to integrate into different electronic systems or devices.

Peak Reflow Temperature °C: 260

The peak reflow temperature of 260 °C ensures that the device can withstand high temperatures during the manufacturing process, leading to reliable performance.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

The use of a trans voltage suppressor diode ensures efficient and effective transient voltage suppression, protecting sensitive electronic components from voltage spikes.

Technical Specifications

Transient Suppression Devices P6KE11ARLG attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Additional Features:

EXCELLENT CLAMPING CAPABILITY, HIGH RELIABILITY

Maximum Breakdown Voltage:

11.6 V

Minimum Breakdown Voltage:

10.5 V

Nominal Breakdown Voltage:

11.05 V

Case Connection:

ISOLATED

Maximum Clamping Voltage:

15.6 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

O-PALF-W2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Reverse Power Dissipation:

600 W

No. of Elements:

1

No. of Terminals:

2

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

LONG FORM

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

5 W

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Maximum Repetitive Peak Reverse Voltage:

9.4 V

Sub-Category:

Transient Suppressors

Surface Mount:

NO

Technology:

AVALANCHE

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Trade Compliance

P6KE11ARLG Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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