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NZ9F4V3T5G

Onsemi

NZ9F4V3T5G by Onsemi

NZ9F4V3T5G by Onsemi is a Zener diode with a nominal reference voltage of 4.3V and max voltage tolerance of 4.99%. It operates in temperatures ranging from -65 to 150 °C and has a max power dissipation of 0.2W. This single-configured diode is ideal for applications requiring precise voltage regulation in compact electronic devices.

Median Price

$0.070

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip1Stop

Japan . 7,778 parts In-Stock

1+ parts

$0.503

100+ parts

$0.125

1k+ parts

$0.074

10k+ parts

-

7,778

$0.503

$0.125

$0.074

-

Rochester

USA . 760,000 parts In-Stock

1+ parts

-

100+ parts

$0.061

1k+ parts

$0.051

10k+ parts

$0.045

760,000

-

$0.061

$0.051

$0.045

DigiKey

USA . 760,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

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$0.080

760,000

-

-

-

$0.080

Verical

USA . 336,000 parts In-Stock

1+ parts

-

100+ parts

-

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-

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$0.057

336,000

-

-

-

$0.057

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 85 parts In-Stock

1+ parts

$0.051

100+ parts

-

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85

$0.051

-

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Chip Stock

USA . 45,000 parts In-Stock

1+ parts

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45,000

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Vyrian

USA . 11,821 parts In-Stock

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11,821

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 245 parts In-Stock

1+ parts

$0.049

100+ parts

-

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245

$0.049

-

-

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Corohmni

South Africa . 313 parts In-Stock

1+ parts

$0.054

100+ parts

-

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-

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313

$0.054

-

-

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Ampacity Inc.

Singapore . 367,585 parts In-Stock

1+ parts

$0.100

100+ parts

-

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367,585

$0.100

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AZTECH Wire

Italy . 749 parts In-Stock

1+ parts

$12.570

100+ parts

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749

$12.570

-

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Continental Prestige Electronics

USA . 760,000 parts In-Stock

1+ parts

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$0.039

10k+ parts

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760,000

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-

$0.039

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Perfect Parts

USA . 97,668 parts In-Stock

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97,668

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GreenTree Electronics

Israel . 7,778 parts In-Stock

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7,778

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Authorized Procurement Solutions

USA . 7,778 parts In-Stock

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7,778

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Problanco Electronics

Mexico . 6,724 parts In-Stock

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6,724

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Kulean Microsystems

USA . 6,113 parts In-Stock

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6,113

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SupplyDigital Components

Austria . 3,579 parts In-Stock

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3,579

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TANS Electronics

Latvia . 1,374 parts In-Stock

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1,374

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UHIMA Technologies

Türkiye . 843 parts In-Stock

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843

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Overview

Experience the quality and reliability of Onsemi with the NZ9F4V3T5G Zener Diode. This single-configured diode offers a wide range of applications, from voltage regulation to surge protection. With a maximum voltage tolerance of 4.99% and a nominal reference voltage of 4.3V, this diode ensures stable performance in various environments. Trust in Onsemi's expertise in semiconductor manufacturing to provide you with a top-notch product that delivers consistent results with every use. Upgrade your electronic projects with the NZ9F4V3T5G Zener Diode and experience the value and benefits it brings to your designs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy packaging provides durability and protection for the diode, ensuring long-term reliability.

Working Test Current: 5 mA

A 5 mA working test current allows for precise testing and ensures accurate performance of the diode.

Surface Mount: YES

Surface mount capability makes it easy to integrate the diode into compact and densely populated electronic designs.

Maximum Voltage Tolerance: 4.99 %

The tight maximum voltage tolerance of 4.99% ensures consistent and accurate voltage regulation in the circuit.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150 °C allows the diode to operate reliably in a wide range of environments and applications.

Maximum Dynamic Impedance: 100 ohm

A low maximum dynamic impedance of 100 ohm ensures efficient voltage regulation and minimal power loss in the circuit.

Nominal Reference Voltage: 4.3 V

The 4.3V nominal reference voltage provides stable and precise voltage regulation for the circuit.

Technical Specifications

Zener Diodes NZ9F4V3T5G attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

100 ohm

JESD-30 Code:

R-PDSO-F2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.2 W

Qualification:

Not Qualified

Nominal Reference Voltage:

4.3 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Maximum Voltage Tolerance:

4.99 %

Working Test Current:

5 mA

Trade Compliance

NZ9F4V3T5G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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