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NUS3045MNT1

Onsemi

NUS3045MNT1 by Onsemi

NUS3045MNT1 by Onsemi is a Power Management IC with 8 terminals, Vsup ranging from 3V to 25V. It has a small outline package shape, suitable for industrial applications with operating temperatures from -40 °C to 85°C. The IC supports power supplies up to 6V and has a max seated height of 1mm, making it ideal for surface mount designs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,081 parts In-Stock

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2,081

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Vyrian

USA . 1,780 parts In-Stock

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1,780

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

TANS Electronics

Latvia . 7,709 parts In-Stock

1+ parts

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7,709

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Problanco Electronics

Mexico . 6,726 parts In-Stock

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6,726

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Kulean Microsystems

USA . 6,342 parts In-Stock

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6,342

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SupplyDigital Components

Austria . 6,126 parts In-Stock

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6,126

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Corphita

USA . 1,401 parts In-Stock

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1,401

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UHIMA Technologies

Türkiye . 538 parts In-Stock

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538

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Corohmni

South Africa . 330 parts In-Stock

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330

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Overview

Enhance your power management solutions with the NUS3045MNT1 by Onsemi. As a leading manufacturer in the industry, Onsemi's Power Management ICs are known for their quality and reliability. The NUS3045MNT1 is perfect for a wide range of applications, offering customers unmatched value and benefits. With its compact design and high performance, this product is ideal for industrial settings where temperature control and efficiency are crucial. Upgrade your power systems today with the NUS3045MNT1 and experience the advantages of cutting-edge technology at your fingertips.

Feature Benefit Bullets

Surface Mount: YES

This allows for easy and efficient mounting on PCBs, saving space and making the integration process simpler.

Nominal Supply Voltage (Vsup): 4.8 V

This voltage is within a common range for many electronic devices, ensuring compatibility with various systems.

Number of Terminals: 8

Having multiple terminals provides flexibility for connecting to different components and circuits.

Maximum Operating Temperature: 85 C

With a high maximum operating temperature, this IC can withstand demanding conditions without overheating.

Terminal Finish: TIN LEAD

The tin lead finish provides good solderability and electrical conductivity for reliable connections.

Technical Specifications

Power Management ICs NUS3045MNT1 attributes and parameters. Explore more Power Management ICs devices from Onsemi

Specs

Adjustable Threshold:

NO

JESD-30 Code:

S-XDSO-N8

JESD-609 Code:

e0

Length:

3.3 mm

Moisture Sensitivity Level (MSL):

1

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

8

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

UNSPECIFIED

Package Code:

Package Equivalence Code:

SOLCC8,.12,32

Package Shape:

Package Style (Meter):

SMALL OUTLINE, VERY THIN PROFILE

Peak Reflow Temperature (C):

235

Power Supplies (V):

6

Qualification:

Not Qualified

Maximum Seated Height:

1 mm

Sub-Category:

Power Management Circuits

Maximum Supply Current (Isup):

1 mA

Maximum Supply Voltage (Vsup):

25 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage (Vsup):

4.8 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

NO LEAD

Terminal Pitch:

.8 mm

Terminal Position:

DUAL

Width (mm):

3.3 mm

Trade Compliance

NUS3045MNT1 Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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