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NUP5120X6T1

Onsemi

NUP5120X6T1 by Onsemi

NUP5120X6T1 by Onsemi is a transient suppression device with 5 elements in common anode configuration. It has a max non-repetitive peak reverse power dissipation of 90W and breakdown voltage of 6.8V. Ideal for protecting electronic circuits from voltage spikes, it is a surface mount diode with unidirectional polarity and avalanche technology.

Median Price

$0.225

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 3,970 parts In-Stock

1+ parts

-

100+ parts

$0.225

1k+ parts

$0.186

10k+ parts

$0.166

3,970

-

$0.225

$0.186

$0.166

DigiKey

USA . 3,970 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

$0.280

3,970

-

-

-

$0.280

Verical

USA . 3,970 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

$0.208

3,970

-

-

-

$0.208

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,034 parts In-Stock

1+ parts

$0.175

100+ parts

-

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2,034

$0.175

-

-

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Chip Stock

USA . 38,000 parts In-Stock

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38,000

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Vyrian

USA . 10,099 parts In-Stock

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10,099

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Distributors (Availability)

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Ampacity Inc.

Singapore . 3,588 parts In-Stock

1+ parts

$0.148

100+ parts

-

1k+ parts

-

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-

3,588

$0.148

-

-

-

Corphita

USA . 1,881 parts In-Stock

1+ parts

$0.166

100+ parts

-

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1,881

$0.166

-

-

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Corohmni

South Africa . 355 parts In-Stock

1+ parts

$0.174

100+ parts

-

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355

$0.174

-

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AZTECH Wire

Italy . 646 parts In-Stock

1+ parts

$19.330

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646

$19.330

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Kepictronics

USA . 20,947 parts In-Stock

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20,947

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A-Z Elektronik GmbH

Germany . 6,330 parts In-Stock

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6,330

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Authorized Procurement Solutions

USA . 4,500 parts In-Stock

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4,500

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Continental Prestige Electronics

USA . 3,970 parts In-Stock

1+ parts

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100+ parts

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$0.158

10k+ parts

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3,970

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$0.158

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Problanco Electronics

Mexico . 3,750 parts In-Stock

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3,750

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Assy Fe

Spain . 3,714 parts In-Stock

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3,714

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SupplyDigital Components

Austria . 2,399 parts In-Stock

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2,399

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UHIMA Technologies

Türkiye . 968 parts In-Stock

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968

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Kulean Microsystems

USA . 519 parts In-Stock

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519

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Perfect Parts

USA . 392 parts In-Stock

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392

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TANS Electronics

Latvia . 265 parts In-Stock

1+ parts

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100+ parts

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265

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Overview

Discover the NUP5120X6T1 by Onsemi, a top-quality transient suppression device designed to provide reliable protection against voltage spikes. Manufactured by Onsemi, a trusted name in the industry, this product offers peace of mind for various applications. With its common anode configuration and compact package, it is easy to install and ensures optimal performance. Say goodbye to worrying about electrical surges with the NUP5120X6T1, a versatile solution that delivers value and unmatched protection for your electronics.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and protection for the components inside.

Config: COMMON ANODE, 5 ELEMENTS

The common anode configuration with 5 elements allows for effective transient suppression and protection across multiple channels.

Surface Mount: YES

Being surface mountable makes installation easy and quick, saving time and effort.

Maximum Non Repetitive Peak Reverse Power Dissipation: 90 W

High power dissipation capacity enables the device to handle large surges effectively.

Nominal Breakdown Voltage: 6.8 V

The nominal breakdown voltage of 6.8 V ensures reliable protection against voltage spikes.

Package Shape: RECTANGULAR

Rectangular shape allows for compact and efficient packing of multiple devices.

No. of Terminals: 6

Having 6 terminals provides flexibility in connecting the device in different circuit configurations.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space and is suitable for modern compact electronic devices.

Terminal Finish: TIN

Tin terminal finish provides good conductivity and solderability for reliable connections.

Terminal Position: DUAL

Dual terminal position offers flexibility in PCB layout and installation orientation.

Minimum Breakdown Voltage: 6.2 V

The minimum breakdown voltage ensures effective protection even for lower voltage thresholds.

Peak Reflow Temperature °C: 260

With a peak reflow temperature of 260 °C, the device can withstand high-temperature assembly processes.

Maximum Breakdown Voltage: 7.2 V

The maximum breakdown voltage provides an additional margin of safety for protecting sensitive components.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

The use of Trans Voltage Suppressor Diode ensures efficient voltage clamping and transient suppression performance.

Technology: AVALANCHE

Avalanche technology offers fast response time and high energy absorption capability for superior transient protection.

Terminal Form: FLAT

Flat terminal form enables easy soldering and secure mounting on the PCB.

No. of Elements: 5

Having 5 elements provides multi-stage transient suppression for enhanced protection against surges.

Maximum Repetitive Peak Reverse Voltage: 5 V

The maximum repetitive peak reverse voltage of 5 V ensures consistent protection against repeated voltage spikes.

Polarity: UNIDIRECTIONAL

Unidirectional polarity ensures that voltage spikes are effectively clamped in one direction, offering unidirectional protection.

Diode Element Material: SILICON

Silicon diode element material offers reliable performance and high temperature tolerance for long-term use.

Technical Specifications

Transient Suppression Devices NUP5120X6T1 attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Maximum Breakdown Voltage:

7.2 V

Minimum Breakdown Voltage:

6.2 V

Nominal Breakdown Voltage:

6.8 V

Config:

COMMON ANODE, 5 ELEMENTS

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-F6

JESD-609 Code:

e3

Maximum Non Repetitive Peak Reverse Power Dissipation:

90 W

No. of Elements:

5

No. of Terminals:

6

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

5 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Trade Compliance

NUP5120X6T1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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