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NUP3125WTT1G

Onsemi

NUP3125WTT1G by Onsemi

NUP3125WTT1G by Onsemi is a Zener technology Trans Voltage Suppressor Diode with 2 elements, common cathode configuration, and bidirectional polarity. It has a max clamping voltage of 60V, breakdown voltage of 39V, and max non-repetitive peak reverse power dissipation of 120W. Ideal for transient suppression applications in electronics due to its compact small outline package style and high operating temperature range from -55 °C to 150°C.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

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Avnet

USA . 15,000 parts In-Stock

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Flip Electronics

USA . 132,000 parts In-Stock

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USA . 28,000 parts In-Stock

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Vyrian

USA . 953 parts In-Stock

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Digiode

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Problanco Electronics

Mexico . 7,554 parts In-Stock

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Kulean Microsystems

USA . 4,698 parts In-Stock

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SupplyDigital Components

Austria . 1,915 parts In-Stock

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TANS Electronics

Latvia . 826 parts In-Stock

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Corohmni

South Africa . 483 parts In-Stock

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Corphita

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UHIMA Technologies

Türkiye . 250 parts In-Stock

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Overview

Looking for reliable transient suppression devices? Look no further than the NUP3125WTT1G by Onsemi. With a reputation for high-quality products, Onsemi delivers exceptional performance and durability. Ideal for a variety of applications, this device offers superior protection against voltage spikes and surges. Experience peace of mind knowing your electronics are safeguarded with the NUP3125WTT1G - an essential component for any system in need of reliable protection.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material provides durability and protection to the components inside, making this product suitable for various environmental conditions.

Config: COMMON CATHODE, 2 ELEMENTS

The common cathode configuration with 2 elements allows for efficient transient suppression and protection against voltage spikes in electronic circuits.

Surface Mount: YES

Being surface mountable offers easy and convenient installation, saving time and ensuring a compact design in electronic devices.

Maximum Non Repetitive Peak Reverse Power Dissipation: 120 W

With a high maximum non-repetitive peak reverse power dissipation, this product can handle sudden power surges effectively, safeguarding the connected components.

Nominal Breakdown Voltage: 39 V

The nominal breakdown voltage of 39 V ensures reliable protection by clamping voltages above this level, preventing damage to sensitive electronics.

Maximum Reverse Current: 0.1 uA

The maximum reverse current of 0.1 uA indicates minimal leakage current, ensuring efficient transient suppression without affecting normal circuit operation.

Package Shape: RECTANGULAR

The rectangular package shape allows for space-saving and efficient placement on circuit boards, contributing to a tidy layout and ease of integration.

Reverse Test Voltage: 32 V

The reverse test voltage of 32 V indicates the maximum voltage that can be applied in the reverse direction without causing damage, ensuring long-term reliability.

No. of Terminals: 3

The 3 terminals provide a secure and stable connection, enabling proper functioning of the transient suppression device within the electronic system.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space and allows for efficient use of board real estate, ideal for compact electronic devices with limited room for components.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150 °C ensures reliable performance even in demanding thermal conditions, enhancing the product's overall durability.

Minimum Operating Temperature: -55 °C

With a minimum operating temperature of -55 °C, this product can withstand low-temperature environments, making it suitable for a wide range of applications.

Terminal Position: DUAL

The dual terminal position provides flexibility in installation and connection options, allowing for versatile and convenient integration in various electronic setups.

Minimum Breakdown Voltage: 35.6 V

The minimum breakdown voltage of 35.6 V ensures effective suppression of transient voltages above this level, safeguarding sensitive components from damage.

Reference Standard: IEC-61000-4-2, 4-4, 4-5

Compliance with the IEC standards for transient suppression devices ensures high-quality performance and reliability, meeting industry guidelines for protection against voltage spikes.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

The use of trans voltage suppressor diodes indicates advanced protection capabilities against voltage transients, making this product a reliable choice for safeguarding electronic circuits.

Technology: ZENER

The Zener technology employed in this product ensures precise voltage clamping and transient suppression, offering effective protection against electrical transients and overvoltage events.

Terminal Form: GULL WING

The gull wing terminal form facilitates easy soldering and secure mounting on circuit boards, enhancing reliability and simplifying the assembly process during installation.

No. of Elements: 2

Having 2 elements provides redundancy and enhanced protection, ensuring that even if one element fails, the other can continue to suppress transients effectively.

Maximum Repetitive Peak Reverse Voltage: 32 V

The maximum repetitive peak reverse voltage of 32 V ensures consistent protection against repeated voltage spikes, maintaining the integrity of connected electronic components.

Polarity: BIDIRECTIONAL

The bidirectional polarity allows for effective transient suppression in both directions, offering comprehensive protection against voltage transients and ensuring overall system reliability.

Maximum Clamping Voltage: 60 V

The maximum clamping voltage of 60 V indicates the level at which the device will clamp transient voltages, ensuring that connected components are not exposed to damaging voltage levels.

Diode Element Material: SILICON

The use of silicon diode element material provides high-performance characteristics and reliability, ensuring efficient transient suppression and long-term durability of the device.

Technical Specifications

Transient Suppression Devices NUP3125WTT1G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Minimum Breakdown Voltage:

35.6 V

Nominal Breakdown Voltage:

39 V

Maximum Clamping Voltage:

60 V

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-G3

Maximum Non Repetitive Peak Reverse Power Dissipation:

120 W

No. of Elements:

2

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity:

BIDIRECTIONAL

Reference Standard:

IEC-61000-4-2, 4-4, 4-5

Maximum Repetitive Peak Reverse Voltage:

32 V

Maximum Reverse Current:

.1 uA

Reverse Test Voltage:

32 V

Surface Mount:

YES

Technology:

ZENER

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

NUP3125WTT1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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