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NTSA4100T3G

Onsemi

NTSA4100T3G by Onsemi

NTSA4100T3G by Onsemi is a Schottky rectifier diode with a max output current of 4A and forward voltage of 0.66V. It operates b/w -55 °C to 150°C, ideal for efficiency applications. This single-configured diode has a max reverse current of 25uA and can handle up to 100V peak reverse voltage.

Median Price

$0.854

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 89,534 parts In-Stock

1+ parts

-

100+ parts

$0.854

1k+ parts

$0.708

10k+ parts

$0.632

89,534

-

$0.854

$0.708

$0.632

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,084 parts In-Stock

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$0.665

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1,084

$0.665

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Vyrian

USA . 2,182 parts In-Stock

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$0.700

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2,182

$0.700

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Chip Stock

USA . 23,640 parts In-Stock

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23,640

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Distributors (Availability)

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Corphita

USA . 1,228 parts In-Stock

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$0.630

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1,228

$0.630

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Corohmni

South Africa . 131 parts In-Stock

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$0.700

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131

$0.700

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Infinite Electronics LLP (Excess)

. 3,820,011 parts In-Stock

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3,820,011

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Problanco Electronics

Mexico . 6,581 parts In-Stock

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A-Z Elektronik GmbH

Germany . 5,096 parts In-Stock

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5,096

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S.R.D Solutions

India . 5,000 parts In-Stock

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Assy Fe

Spain . 4,480 parts In-Stock

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4,480

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Kulean Microsystems

USA . 3,330 parts In-Stock

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3,330

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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3,000

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SupplyDigital Components

Austria . 2,690 parts In-Stock

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2,690

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TANS Electronics

Latvia . 492 parts In-Stock

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492

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UHIMA Technologies

Türkiye . 332 parts In-Stock

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332

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Overview

Unlock the power of efficiency with the NTSA4100T3G by Onsemi. Crafted with precision and quality, this rectifier diode offers a seamless solution for your electronics needs. Whether you're looking to optimize performance or enhance reliability, this versatile component is designed to deliver exceptional results in a variety of applications. Experience the value and benefits that Onsemi brings to the table with the NTSA4100T3G - your key to maximizing productivity and efficiency in every project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diode, ensuring long-lasting performance.

Surface Mount: YES

Facilitates easy installation on circuit boards, saving time and effort during assembly.

Maximum Reverse Current: 25 uA

Efficiently controls the flow of current in reverse direction, preventing damage to the diode.

Application: EFFICIENCY

Designed for high efficiency applications, making it a reliable choice for various electronic devices.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, ensuring stable performance even in demanding conditions.

Technology: SCHOTTKY

Utilizes Schottky technology for improved efficiency and lower forward voltage drop, enhancing overall performance.

Maximum Output Current: 4 A

Supports a high output current, making it suitable for applications that require reliable power delivery.

Technical Specifications

Diodes & Rectifiers NTSA4100T3G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE, LOW POWER LOSS

Application:

EFFICIENCY

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.66 V

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

50 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

4 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Repetitive Peak Reverse Voltage:

100 V

Maximum Reverse Current:

25 uA

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NTSA4100T3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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