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NTS560MFST1G

Onsemi

NTS560MFST1G by Onsemi

NTS560MFST1G by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.6V and output current of 5A. It operates b/w -55°C to 150°C, making it suitable for high-efficiency applications. With a max reverse current of 55uA, this diode is ideal for various electronic circuits requiring low power consumption.

Median Price

$0.170

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

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Flip Electronics (Authorized)

USA . 1,500 parts In-Stock

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Rochester

USA . 1,200 parts In-Stock

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$0.196

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$0.162

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$0.145

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$0.145

Mouser Electronics

USA . 800 parts In-Stock

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Digiode

USA . 168 parts In-Stock

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Vyrian

USA . 6,566 parts In-Stock

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USA . 1,500 parts In-Stock

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Corphita

USA . 1,829 parts In-Stock

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Corohmni

South Africa . 323 parts In-Stock

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Problanco Electronics

Mexico . 6,025 parts In-Stock

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TANS Electronics

Latvia . 5,559 parts In-Stock

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SupplyDigital Components

Austria . 5,524 parts In-Stock

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Kulean Microsystems

USA . 3,953 parts In-Stock

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UHIMA Technologies

Türkiye . 385 parts In-Stock

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Overview

Unlock the power of efficiency with the NTS560MFST1G diode by Onsemi. Designed with quality in mind, this single-config Schottky diode offers reliable performance in a small outline package. With a maximum output current of 5A and a low forward voltage of just 0.6V, this diode is perfect for applications where efficiency is key. Whether you're working on power supplies, converters, or motor controls, this diode delivers the value and benefits you need to succeed. Trust in Onsemi's reputation for excellence and choose the NTS560MFST1G for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the internal components of the diode, ensuring durability and reliability in various working conditions.

Surface Mount: YES

Allows for easy and convenient installation on circuit boards, saving time and effort during assembly.

Maximum Reverse Current: 55 uA

Low reverse current ensures minimal power loss and improves overall efficiency of the diode.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures without compromising performance, making it suitable for demanding applications.

Terminal Finish: Matte Tin (Sn) - annealed

Provides a reliable and stable connection, reducing the risk of signal loss or interference.

Technical Specifications

Diodes & Rectifiers NTS560MFST1G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE, LOW POWER LOSS

Application:

EFFICIENCY

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.6 V

JESD-30 Code:

R-PDSO-F5

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

100 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

5

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

5 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Repetitive Peak Reverse Voltage:

60 V

Maximum Reverse Current:

55 uA

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NTS560MFST1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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