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NTP75N03-6G

Onsemi

NTP75N03-6G by Onsemi

NTP75N03-6G by Onsemi is an N-Channel MOSFET with Vdss of 30V, Id of 75A, and Rds On of 6.5mOhm @10V. Ideal for applications requiring high power dissipation up to 125W at temperatures ranging from -55 °C to 150°C. Suitable for use in various electronic devices due to its TO-220 package and through-hole mounting type.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 3,807 parts In-Stock

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Digiode

USA . 1,172 parts In-Stock

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AZTECH Wire

Italy . 545 parts In-Stock

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$18.400

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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Perfect Parts

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QUARKTWIN TECHNOLOGY LTD

USA . 24,561 parts In-Stock

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Kepictronics

USA . 13,000 parts In-Stock

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A-Z Elektronik GmbH

Germany . 6,975 parts In-Stock

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Kulean Microsystems

USA . 4,470 parts In-Stock

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Problanco Electronics

Mexico . 2,736 parts In-Stock

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SupplyDigital Components

Austria . 2,243 parts In-Stock

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UHIMA Technologies

Türkiye . 770 parts In-Stock

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Corphita

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TANS Electronics

Latvia . 550 parts In-Stock

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Corohmni

South Africa . 472 parts In-Stock

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Overview

Unlock the potential of your electronic projects with the NTP75N03-6G by Onsemi. As a leading manufacturer in discrete semiconductor products, Onsemi brings you a high-quality N-channel MOSFET that delivers unparalleled performance and reliability. Ideal for a wide range of applications, this transistor features a low on-resistance and high current capability, making it a versatile choice for your design needs. Trust Onsemi to provide you with top-notch components that offer exceptional value and benefits, ensuring your projects run smoothly and efficiently.

Feature Benefit Bullets

Standard Package: 50

Allows for easy handling and storage of multiple units, making it convenient for bulk purchases and assembly.

Category: Discrete Semiconductor Products, Transistors, FETs, MOSFETs, Single FETs, MOSFETs

Clearly defines the type of component, ensuring compatibility with specific circuit designs.

Package: Tube

Provides protection and organization for transportation and storage of the components.

FET Type: N-Channel, Technology: MOSFET (Metal Oxide)

Indicates the specific function and technology used, ensuring proper functionality in the circuit.

Drain to Source Voltage (Vdss): 30 V

Suitable for applications requiring voltage regulation and power management within the specified range.

Current - Continuous Drain (Id) @ 25 °C: 75A (Tc)

Capable of handling high current loads, making it ideal for power applications.

Drive Voltage (Max Rds On, Min Rds On): 10V

Provides a optimal drive voltage for efficient operation and performance.

Rds On (Max) @ Id, Vgs: 6.5mOhm @ 37.5A, 10V

Low on-state resistance ensures minimal power loss and higher efficiency.

Vgs(th) (Max) @ Id: 2V @ 250µA

Defines the threshold voltage required for the FET to switch on, ensuring reliable operation.

Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 5 V

Low gate charge results in faster switching speed and reduced power dissipation.

Vgs (Max): ±20V

Wide gate-source voltage range allows for flexibility in driving the FET.

Input Capacitance (Ciss) (Max) @ Vds: 5635 pF @ 25 V

Defines the input capacitance, crucial for driving and switching characteristics.

Power Dissipation (Max): 2.5W (Ta), 125W (Tc)

Capable of handling high power dissipation, suitable for demanding applications.

Operating Temperature: -55 °C ~ 150°C (TJ)

Wide temperature range makes it suitable for use in extreme environments.

Mounting Type: Through Hole

Allows for easy and secure mounting on PCBs, ensuring mechanical stability.

Supplier Device Package: TO-220

Standard package type for easy integration and compatibility with existing designs.

Package / Case: TO-220-3

Specific case style for easy identification and installation in circuits.

Base Product Number: NTP75N

Unique identifier for this specific component model.

Moisture Sensitivity Level (MSL): 1 (Unlimited)

Indicates the level of moisture sensitivity, ensuring reliability in different environments.

Technical Specifications

Additional Parts NTP75N03-6G attributes and parameters. Explore more Additional Parts devices from Onsemi

Technical Specifications

Operating Temperature:

-55°C ~ 150°C (TJ)

Category:

Discrete Semiconductor Products
Transistors FETs, MOSFETs Single FETs, MOSFETs

FET Type:

N-Channel

Input Capacitance (Ciss) (Max) @ Vds:

5635 pF @ 25 V

Gate Charge (Qg) (Max) @ Vgs:

75 nC @ 5 V

Mounting Type:

Through Hole

Rds On (Max) @ Id, Vgs:

6.5mOhm @ 37.5A, 10V

Vgs(th) (Max) @ Id:

2V @ 250µA

Supplier Device Package:

TO-220

Standard Package:

50

Drain to Source Voltage (Vdss):

30 V

Power Dissipation (Max):

2.5W (Ta), 125W (Tc)

Package / Case:

TO-220-3

Technology:

MOSFET (Metal Oxide)

Current - Continuous Drain (Id) @ 25°C:

75A (Tc)

Vgs (Max):

±20V

Drive Voltage (Max Rds On, Min Rds On):

10V

Package:

Tube

Base Product Number:

NTP75N

Moisture Sensitivity Level (MSL):

1 (Unlimited)

Trade Compliance

NTP75N03-6G Miscellaneous Components trade compliance attributes, and parameters.

ECCN

EAR99

HTS

8541.29.0095

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Authentic purchasing experiences

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