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NTMSD2P102R2

Onsemi

NTMSD2P102R2 by Onsemi

NTMSD2P102R2 by Onsemi is a P-Channel MOSFET with Vdss of 20V, Id of 2.3A, and Rds On of 90mOhm. It features Gate Charge of 18nC and Input Capacitance of 750pF, suitable for applications requiring efficient power management in compact electronic devices. This surface-mount transistor comes in an 8-SOIC package ideal for space-constrained designs with Schottky Diode feature for improved performance.

Median Price

$0.229

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

NTMSD2P102R2 by Onsemi
Compare Share

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 2,500 parts In-Stock

1+ parts

-

100+ parts

$0.238

1k+ parts

$0.197

10k+ parts

$0.176

2,500

-

$0.238

$0.197

$0.176

Verical

USA . 2,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.220

2,500

-

-

-

$0.220

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,669 parts In-Stock

1+ parts

$0.185

100+ parts

-

1k+ parts

-

10k+ parts

-

1,669

$0.185

-

-

-

Vyrian

USA . 8,385 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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8,385

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 293 parts In-Stock

1+ parts

$0.176

100+ parts

-

1k+ parts

-

10k+ parts

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293

$0.176

-

-

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Corohmni

South Africa . 124 parts In-Stock

1+ parts

$0.195

100+ parts

-

1k+ parts

-

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124

$0.195

-

-

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AZTECH Wire

Italy . 1,051 parts In-Stock

1+ parts

$20.320

100+ parts

-

1k+ parts

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10k+ parts

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1,051

$20.320

-

-

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A-Z Elektronik GmbH

Germany . 6,905 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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6,905

-

-

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SupplyDigital Components

Austria . 4,340 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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4,340

-

-

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TANS Electronics

Latvia . 3,444 parts In-Stock

1+ parts

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100+ parts

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3,444

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-

-

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Continental Prestige Electronics

USA . 2,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.179

10k+ parts

-

2,500

-

-

$0.179

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Problanco Electronics

Mexico . 2,442 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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2,442

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-

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Kulean Microsystems

USA . 1,622 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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1,622

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-

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UHIMA Technologies

Türkiye . 224 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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224

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Overview

Upgrade your electronic devices with the NTMSD2P102R2 by Onsemi. As a leading manufacturer in the industry, Onsemi guarantees top-quality products that provide unmatched performance and reliability. This P-Channel MOSFET offers a low Rds On and high Gate Charge, making it ideal for various applications in the electronics field. With its efficient design and advanced technology, this component ensures optimal functionality and long-lasting durability. Trust Onsemi to deliver excellence in every product, including the NTMSD2P102R2.

Feature Benefit Bullets

Other Names: ONSONSNTMSD2P102R2 or 2156-NTMSD2P102R2

Unique identifiers for easy reference and ordering.

Standard Package: 2,500

Convenient quantity for bulk purchasing and stocking.

Category: Discrete Semiconductor Products, Transistors, FETs, MOSFETs, Single FETs, MOSFETs

Clearly classified under discrete semiconductor products for targeted applications.

Packaging: Tape & Reel (TR)

Ensures safe transportation and organized storage.

FET Type: P-Channel

Suitable for applications requiring P-channel MOSFETs.

Technology: MOSFET (Metal Oxide)

Utilizes MOSFET technology known for efficiency and performance.

Drain to Source Voltage (Vdss): 20V

Adequate voltage rating for specific applications.

Current - Continuous Drain (Id) @ 25 °C: 2.3A (Ta)

Can handle continuous current flow at standard operating temperature.

Rds On (Max) @ Id, Vgs: 90mOhm @ 2.4A, 4.5V

Low on-resistance for efficient power conduction.

Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V

Fast switching properties with low gate charge.

Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 16V

Suitable input capacitance for circuit stability.

FET Feature: Schottky Diode (Isolated)

Includes a Schottky diode for improved efficiency and performance.

Mounting Type: Surface Mount

Easy and secure installation on PCBs.

Supplier Device Package: 8-SOIC

Standard package for ease of integration.

Package / Case: 8-SOIC (0.154", 3.90mm Width)

Compact package size for space-efficient designs.

Base Product Number: NTMSD2

Identifies the base model for compatibility and replacement.

Moisture Sensitivity Level (MSL): 3 (168 Hours)

Designed to withstand a certain level of moisture exposure during handling and storage.

Technical Specifications

Additional Parts NTMSD2P102R2 attributes and parameters. Explore more Additional Parts devices from Onsemi

Technical Specifications

Other Names:

ONSONSNTMSD2P102R2
2156-NTMSD2P102R2

FET Feature:

Schottky Diode (Isolated)

Category:

Discrete Semiconductor Products
Transistors FETs, MOSFETs Single FETs, MOSFETs

FET Type:

P-Channel

Input Capacitance (Ciss) (Max) @ Vds:

750 pF @ 16 V

Gate Charge (Qg) (Max) @ Vgs:

18 nC @ 4.5 V

Mounting Type:

Surface Mount

Rds On (Max) @ Id, Vgs:

90mOhm @ 2.4A, 4.5V

Supplier Device Package:

8-SOIC

Standard Package:

2,500

Drain to Source Voltage (Vdss):

20 V

Package / Case:

8-SOIC (0.154", 3.90mm Width)

Technology:

MOSFET (Metal Oxide)

Packaging:

Tape & Reel (TR)

Current - Continuous Drain (Id) @ 25°C:

2.3A (Ta)

Base Product Number:

NTMSD2

Moisture Sensitivity Level (MSL):

3 (168 Hours)

Trade Compliance

NTMSD2P102R2 Miscellaneous Components trade compliance attributes, and parameters.

ECCN

EAR99

HTS

8541.29.0095

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Authentic purchasing experiences

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