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NTD95N02R-1G

Onsemi

NTD95N02R-1G by Onsemi

NTD95N02R-1G by Onsemi is an N-Channel MOSFET with a Vdss of 24V and Id of 12A (Ta), 32A (Tc). Featuring Rds On of 5mOhm @ 20A, it has a Gate Charge of 21nC @ 4.5V. Ideal for applications requiring high power dissipation up to 86W in a temperature range from -55 °C to 150°C.

Median Price

$0.282

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 1,875 parts In-Stock

1+ parts

-

100+ parts

$0.277

1k+ parts

$0.230

10k+ parts

$0.205

1,875

-

$0.277

$0.230

$0.205

Verical

USA . 1,875 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.288

1,875

-

-

-

$0.288

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 335 parts In-Stock

1+ parts

$0.217

100+ parts

-

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335

$0.217

-

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Vyrian

USA . 7,813 parts In-Stock

1+ parts

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7,813

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 460 parts In-Stock

1+ parts

$0.205

100+ parts

-

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460

$0.205

-

-

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Corohmni

South Africa . 221 parts In-Stock

1+ parts

$0.228

100+ parts

-

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221

$0.228

-

-

-

Component Stockers USA

USA . 2,775 parts In-Stock

1+ parts

$0.230

100+ parts

$0.220

1k+ parts

$0.200

10k+ parts

-

2,775

$0.230

$0.220

$0.200

-

AZTECH Wire

Italy . 739 parts In-Stock

1+ parts

$13.760

100+ parts

-

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739

$13.760

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Kepictronics

USA . 13,000 parts In-Stock

1+ parts

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13,000

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Kulean Microsystems

USA . 7,646 parts In-Stock

1+ parts

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7,646

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TANS Electronics

Latvia . 5,662 parts In-Stock

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5,662

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SupplyDigital Components

Austria . 4,048 parts In-Stock

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4,048

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Problanco Electronics

Mexico . 3,809 parts In-Stock

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3,809

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Continental Prestige Electronics

USA . 1,875 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

$0.209

10k+ parts

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1,875

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$0.209

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UHIMA Technologies

Türkiye . 398 parts In-Stock

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398

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Overview

Elevate your electronic projects with the NTD95N02R-1G by Onsemi. This high-quality N-channel MOSFET offers superior performance and reliability, making it an essential component for a wide range of applications. From power supplies to motor control, this transistor provides efficient power management and precise control. Trust in Onsemi's expertise and innovation to deliver unmatched value and benefits for your designs. Upgrade your projects today with the NTD95N02R-1G and experience the difference for yourself.

Feature Benefit Bullets

Standard Package: 75

Comes in a convenient tube packaging, easy to handle and store.

Category: Discrete Semiconductor Products, Transistors, FETs, MOSFETs, Single FETs, MOSFETs

Fulfills the requirements for various applications in the field of discrete semiconductor products.

FET Type: N-Channel

Suitable for applications requiring N-Channel FET technology.

Drain to Source Voltage (Vdss): 24 V

Capable of handling higher voltage applications up to 24V.

Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V

Low Rds On value ensures efficient power transmission with minimal losses.

Operating Temperature: -55 °C ~ 150°C (TJ)

Wide operating temperature range makes it suitable for use in various environments.

Mounting Type: Through Hole

Easy to mount and replace in a circuit board.

Technical Specifications

Additional Parts NTD95N02R-1G attributes and parameters. Explore more Additional Parts devices from Onsemi

Technical Specifications

Other Names:

ONSONSNTD95N02R-1G
2156-NTD95N02R-1G

Operating Temperature:

-55°C ~ 150°C (TJ)

Category:

Discrete Semiconductor Products
Transistors FETs, MOSFETs Single FETs, MOSFETs

FET Type:

N-Channel

Input Capacitance (Ciss) (Max) @ Vds:

2400 pF @ 20 V

Gate Charge (Qg) (Max) @ Vgs:

21 nC @ 4.5 V

Mounting Type:

Through Hole

Rds On (Max) @ Id, Vgs:

5mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:

2V @ 250µA

Supplier Device Package:

I-PAK

Standard Package:

75

Drain to Source Voltage (Vdss):

24 V

Power Dissipation (Max):

1.25W (Ta), 86W (Tc)

Package / Case:

TO-251-3 Short Leads, IPak, TO-251AA

Technology:

MOSFET (Metal Oxide)

Current - Continuous Drain (Id) @ 25°C:

12A (Ta), 32A (Tc)

Vgs (Max):

±20V

Drive Voltage (Max Rds On, Min Rds On):

4.5V, 10V

Package:

Tube

Base Product Number:

NTD95

Moisture Sensitivity Level (MSL):

1 (Unlimited)

Trade Compliance

NTD95N02R-1G Miscellaneous Components trade compliance attributes, and parameters.

ECCN

EAR99

HTS

8541.29.0095

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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